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RM21N650TI PDF预览

RM21N650TI

更新时间: 2024-11-22 17:32:39
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
9页 1278K
描述
Vdss (V) : 650 V;Id @ 25C (A) : 21 A;Rds-on (typ) (mOhms) : 180 mOhms;Total Gate Charge (nQ) typ : 48 nQ;Maximum Power Dissipation (W) : 33.8 W;Vgs(th) (typ) : 3.5 V;Input Capacitance (Ciss) : 2600 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220F

RM21N650TI 数据手册

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RM21N650T2  
RM21N650TI  
G
G
D
S
D
RM21N650T2  
RM21N650TI  
S
21N650  
21N650  
2016-09  
REV:O17  

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