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RM21N700T2 PDF预览

RM21N700T2

更新时间: 2024-11-19 01:22:43
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
9页 743K
描述
N-Channel Super Junction Power MOSFET

RM21N700T2 数据手册

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RM21N700T2  
RM21N700TI  
N-Channel Super Junction Power MOSFET II  
General Description  
The series of devices use advanced super junction  
technology and design to provide excellent RDS(ON) with low  
gate charge. This super junction MOSFET fits the industry’s  
AC-DC SMPS requirements for PFC, AC/DC power  
conversion, and industrial power applications.  
VDS  
700  
165  
21  
V
mΩ  
A
RDS(ON) TYP.  
ID  
Features  
ƽNew technology for high voltage device  
ƽLow on-resistance and low conduction losses  
ƽSmall package  
ƽUltra Low Gate Charge cause lower driving requirements  
ƽ100% Avalanche Tested  
ƽROHS compliant  
Application  
ƽꢀ Power factor correction˄PFC˅  
ƽꢀ Switched mode power supplies(SMPS)  
ƽꢀ Uninterruptible Power Supply˄UPS˅  
Schematic diagram  
Package Marking And Ordering Information  
Device  
Device Package  
Marking  
21N700  
21N700  
RM21N700T2  
RM21N700TI  
TO-220  
TO-220F  
TO-220  
TO-220F  
Table 1. Absolute Maximum Ratings (TC=25ć)  
Parameter  
Drain-Source Voltage (VGS=0V˅  
Symbol  
VDS  
RM21N700T2  
RM21N700TI  
700  
Unit  
V
f30  
V
A
Gate-Source Voltage (VDS=0V)  
Continuous Drain Current at Tc=25°C  
VGS  
21  
13.2  
63  
21*  
13.2*  
63*  
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
Continuous Drain Current at Tc=100°C  
A
(Note 1)  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25ć)  
200  
1.6  
34  
W
Derate above 25°C  
0.27  
W/°C  
mJ  
A
Single pulse avalanche energy (Note 2)  
690  
7
EAS  
Avalanche current(Note 1)  
IAR  
Repetitive Avalanche energy ˈtAR limited by Tjmax  
1
EAR  
mJ  
(Note 1)  
2016-12  
REV:O15  

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