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RL253-T PDF预览

RL253-T

更新时间: 2024-10-29 13:12:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 80K
描述
Rectifier Diode

RL253-T 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.45
JESD-609代码:e0端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

RL253-T 数据手册

 浏览型号RL253-T的Datasheet PDF文件第2页浏览型号RL253-T的Datasheet PDF文件第3页 
RL251  
THRU  
RL257  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
2.5 Amp  
Silicon Rectifier  
50 to 1000 Volts  
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
R-3  
Maximum Ratings  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance (RqJA) 35°C/W  
D
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
RL251  
RL252  
RL253  
RL254  
RL255  
RL256  
RL257  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
A
Cathode Mark  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
600V  
800V  
B
D
1000V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
2.5 A  
TA = 75°C  
C
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
IFM = 2.5A;  
TA = 25°C  
INCHES  
MIN  
---  
---  
.040  
1.000  
MM  
MIN  
---  
---  
1.01  
25.40  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
DIM  
A
B
C
D
MAX  
.160  
.160  
.042  
---  
MAX  
4.10  
4.10  
1.07  
---  
NOTE  
5.0mA  
50mA  
TA = 25°C  
TA = 100°C  
Typical Junction  
Capacitance  
CJ  
35pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  

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