Datasheet > RJK03C1DPB

RJK03C1DPB

更新时间： 2024-11-19 06:07:59

品牌	Logo	应用领域
瑞萨 - RENESAS		肖特基二极管开关
页数	文件大小	规格书
7页	263K
描述
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

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数据手册

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RJK03C1DPB 数据手册

Preliminary

RJK03C1DPB

Silicon N Channel Power MOS FET with Schottky Barrier Diode

REJ03G1830-0310

Power Switching

Rev.3.10

Sep 29, 2009

Features

•

High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 1.7 mΩ typ. (at V_GS= 10 V)

•

Pb-free

Halogen-free

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

7 8

D D D D

1, 2, 3 Source

Gate

Drain

S S

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Note1

Drain peak current

I_D(pulse)

240

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

78.4

Channel dissipation

Pch ^Note3

θch-C

Tch

Channel to Case Thermal Resistance

Channel temperature

1.92

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

REJ03G1830-0310 Rev.3.10 Sep 29, 2009

Page 1 of 6

12 3 4 5 6 7

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