Datasheet > RJK03E6DPA

RJK03E6DPA

更新时间： 2024-11-19 09:48:23

品牌	Logo	应用领域
瑞萨 - RENESAS		肖特基二极管开关
页数	文件大小	规格书
7页	96K
描述
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

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RJK03E6DPA 数据手册

Preliminary Datasheet

RJK03E6DPA

Silicon N Channel Power MOS FET with Schottky Barrier Diode

REJ03G1930-0210

Power Switching

Rev.2.10

May 20, 2010

Features



High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 3.8 m typ. (at V_GS= 8 V)



Pb-free

Halogen-free

Outline

RENESAS Package code: PWSN0008DC-A

(Package name: WPAK(2))

7 8

D D D D

6 7 8

1, 2, 3

5, 6, 7, 8 Drain

Source

Gate

4 3 2

S S

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±12

Note1

Drain peak current

I_D(pulse)

140

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

16.9

Channel dissipation

Pch ^Note3

ch-c ^Note3

Tch

Channel to case thermal impedance

Channel temperature

3.57

150

C/W

C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. Value at Tch = 25C, Rg  50 

3. Tc = 25C

REJ03G1930-0210 Rev.2.10

May 20, 2010

Page 1 of 6

12 3 4 5 6 7

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