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RJK03C0DPA PDF预览

RJK03C0DPA

更新时间: 2024-11-23 06:07:59
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 254K
描述
Silicon N Channel Power MOS FET Power Switching

RJK03C0DPA 数据手册

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Preliminary  
RJK03C0DPA  
Silicon N Channel Power MOS FET  
Power Switching  
REJ03G1822-0200  
Rev.2.00  
Sep 29, 2009  
Features  
High speed switching  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 1.5 mΩ typ. (at VGS = 10 V)  
Pb-free  
Halogen-free  
Outline  
RENESAS Package code: PWSN0008DA-A  
(Package name: WPAK)  
5
6
7 8  
D D D D  
8
4
7
6
5
1, 2, 3 Source  
4 Gate  
5, 6, 7, 8 Drain  
4
G
1
2
3
S
1
S S  
3
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
30  
Unit  
V
V
±20  
70  
A
Note1  
Drain peak current  
ID(pulse)  
IDR  
280  
70  
A
Body-drain diode reverse drain current  
Avalanche current  
A
Note 2  
IAP  
35  
A
Note 2  
Avalanche energy  
EAR  
122  
65  
mJ  
W
Channel dissipation  
Pch Note3  
θch-c Note3  
Tch  
Channel to case thermal impedance  
Channel temperature  
1.93  
150  
°C/W  
°C  
°C  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 μs, duty cycle 1%  
2. Value at Tch = 25°C, Rg 50 Ω  
3. Tc = 25°C  
REJ03G1822-0200 Rev.2.00 Sep 29, 2009  
Page 1 of 6  

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