Datasheet > RI20N1200TT

RI20N1200TT

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	145K
描述
Vdss (V) : 1200 V;Id @ 25C (A) : 20 A;Total Gate Charge (nQ) typ : 345 nQ;Maximum Power Dissipation (W) : 395 W;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-247

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RI20N1200TT 数据手册

RI20N1200TT

1200V/20A RC-IGBT

Equivalent Circuit Schematic

General Description

DOSEMI IGBT Power Discrete provides ultra

low conduction loss as well as low switching loss.

They are designed for the applications such as

inductive cooking.

Features

ꢀ

Low V_CE(sat)Trench IGBT technology

Low switching loss

Maximum junction temperature 175^oC

Low inductance case

V_CE(sat)with positive temperature coefficient

Fast & soft reverse recovery anti-parallel FWD

Lead free package

Typical Applications

ꢀ

Inductive cooking

TO-247

Absolute Maximum Ratings ^T_C⁼²⁵^o^{C unless otherwise noted}

Symbol

V_CES

Description

Value

1200

Unit

Collector-Emitter Voltage

V_GES

Gate-Emitter Voltage

Collector Current @ T_C=25^oC

I_C

@ T_C=100^oC

I_CM

P_D

Pulsed Collector Current t_p=1ms

Maximum Power Dissipation @ T_j=175^oC

395

Diode

Symbol

V_RRM

I_F

Description

Value

1200

Unit

Repetitive Peak Reverse Voltage

Diode Continuous Forward Current

Diode Maximum Forward Current t_p=1ms

I_FM

Discrete

Symbol

T_jop

Description

Operating Junction Temperature

Storage Temperature Range

Soldering Temperature,1.6mm from case for 10s

Mounting Torque, Screw M3

Values

-40 to +175

260

Unit

^oC

T_STG

^oC

T_S

^oC

N.m

0.6

2018-12/91

REV:O

12 3 4 5 6 7 8

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