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RGR3B60KD2PBF PDF预览

RGR3B60KD2PBF

更新时间: 2024-02-20 16:12:05
品牌 Logo 应用领域
英飞凌 - INFINEON 电动机控制晶体管
页数 文件大小 规格书
13页 309K
描述
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

RGR3B60KD2PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.62最大集电极电流 (IC):7.8 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):211 ns标称接通时间 (ton):35 ns
Base Number Matches:1

RGR3B60KD2PBF 数据手册

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IRGR3B60KD2PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Ref.Fig.  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)CES  
VGE = 0V, IC = 500µA  
Collector-to-Emitter Breakdown Voltage  
Temperature Coeff. of Breakdown Voltage  
Collector-to-Emitter Voltage  
600  
3.5  
0.32  
1.9  
2.2  
4.5  
-8.5  
1.9  
1.0  
200  
1.5  
1.5  
V
V(BR)CES/TJ  
VCE(on)  
VGE = 0V, IC = 1mA (25°C-150°C)  
IC = 3.0A, VGE = 15V  
V/°C  
5,6,7  
9,10,11  
9,10,11  
12  
2.4  
2.6  
5.5  
IC = 3.0A, VGE = 15V, TJ = 150°C  
V
VGE(th)  
V
V
V
V
CE = VGE, IC = 250µA  
Gate Threshold Voltage  
V
GE(th)/ TJ  
CE = VGE, IC = 1mA (25°C-150°C)  
CE = 50V, IC = 3.0A, PW = 80µs  
GE = 0V, VCE = 600V  
Threshold Voltage temp. coefficient  
Forward Transconductance  
mV/°C  
S
gfe  
ICES  
Zero Gate Voltage Collector Current  
150  
500  
1.8  
1.8  
µA  
VGE = 0V, VCE = 600V, TJ = 150°C  
IF = 3.0A, VGE = 0V  
VFM  
Diode Forward Voltage Drop  
V
8
IF = 3.0A, VGE = 0V, TJ = 150°C  
VGE = ±20V, VCE = 0V  
IGES  
Gate-to-Emitter Leakage Current  
±100 nA  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Ref.Fig.  
23  
Parameter  
Total Gate Charge (turn-on)  
Gate-to-Emitter Charge (turn-on)  
Gate-to-Collector Charge (turn-on)  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Min. Typ. Max. Units  
Conditions  
Qg  
IC = 3.0A  
13  
1.5  
6.6  
62  
20  
2.3  
9.9  
75  
Qge  
Qgc  
Eon  
Eoff  
Etot  
td(on)  
tr  
VCC = 400V  
VGE = 15V  
nC  
µJ  
ns  
CT1  
IC = 3.0A, VCC = 400V  
GE = 15V, RG = 100, L = 2.5mH  
CT4  
CT4  
V
39  
50  
TJ = 25°C  
100  
18  
120  
22  
IC = 3.0A, VCC = 400V  
V
GE = 15V, RG = 100 , L = 2.5mH  
Rise time  
15  
21  
td(off)  
tf  
TJ = 25°C  
Turn-Off delay time  
110  
68  
120  
80  
Fall time  
Eon  
Eoff  
Etot  
td(on)  
tr  
IC = 3.0A, VCC = 400V  
CT4  
13,15  
WF1,WF2  
14,16  
CT4  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
91  
100  
140  
230  
22  
VGE = 15V, RG = 100 , L = 2.5mH  
98  
µJ  
ns  
TJ = 150°C  
190  
18  
IC = 3.0A, VCC = 400V  
V
GE = 15V, RG = 100, L = 2.5mH  
Rise time  
17  
22  
td(off)  
tf  
TJ = 150°C  
Turn-Off delay time  
120  
91  
140  
105  
WF1  
WF2  
Fall time  
Cies  
Coes  
Cres  
RBSOA  
VGE = 0V  
Input Capacitance  
190  
23  
V
CC = 30V  
22  
Output Capacitance  
Reverse Transfer Capacitance  
Reverse Bias Safe Operating Area  
pF  
µs  
6.6  
f = 1.0MHz  
TJ = 150°C, IC = 15.6A, Vp = 600V  
VCC=500V,VGE=+15V to 0V,RG = 100  
TJ = 150°C, Vp = 600V, RG = 100Ω  
VCC=360V,VGE = +15V to 0V  
TJ = 150°C  
4
FULL SQUARE  
CT2  
CT3  
SCSOA  
Short Circuit Safe Operating Area  
10  
WF4  
17,18,19  
20,21  
CT4,WF3  
Erec  
trr  
Reverse Recovery Energy of the Diode  
Diode Reverse Recovery Time  
38  
77  
44  
84  
µJ  
ns  
A
VCC = 400V, IF = 3.0A, L = 2.5mH  
VGE = 15V, RG = 100  
Irr  
Diode Peak Reverse Recovery Current  
4.8  
5.3  
ƒ Energy losses include "tail" and diode reverse recovery.  
‚ When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended  
 VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.  
footprint and soldering techniques refer to application note #AN-994.  
2
www.irf.com  

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