IRGR3B60KD2PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
600
—
—
—
3.5
—
—
—
—
—
—
—
—
0.32
1.9
2.2
4.5
-8.5
1.9
1.0
200
1.5
1.5
—
—
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 3.0A, VGE = 15V
—
V/°C
5,6,7
9,10,11
9,10,11
12
2.4
2.6
5.5
—
IC = 3.0A, VGE = 15V, TJ = 150°C
V
VGE(th)
V
V
V
V
CE = VGE, IC = 250µA
Gate Threshold Voltage
∆
V
∆
GE(th)/ TJ
CE = VGE, IC = 1mA (25°C-150°C)
CE = 50V, IC = 3.0A, PW = 80µs
GE = 0V, VCE = 600V
Threshold Voltage temp. coefficient
Forward Transconductance
mV/°C
S
gfe
—
ICES
Zero Gate Voltage Collector Current
150
500
1.8
1.8
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IF = 3.0A, VGE = 0V
VFM
Diode Forward Voltage Drop
V
8
IF = 3.0A, VGE = 0V, TJ = 150°C
VGE = ±20V, VCE = 0V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
23
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Qg
IC = 3.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
1.5
6.6
62
20
2.3
9.9
75
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
VGE = 15V
nC
µJ
ns
CT1
IC = 3.0A, VCC = 400V
GE = 15V, RG = 100Ω, L = 2.5mH
CT4
CT4
V
39
50
TJ = 25°C
100
18
120
22
IC = 3.0A, VCC = 400V
Ω
V
GE = 15V, RG = 100 , L = 2.5mH
Rise time
15
21
td(off)
tf
TJ = 25°C
Turn-Off delay time
110
68
120
80
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 3.0A, VCC = 400V
CT4
13,15
WF1,WF2
14,16
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
91
100
140
230
22
Ω
VGE = 15V, RG = 100 , L = 2.5mH
98
µJ
ns
TJ = 150°C
190
18
IC = 3.0A, VCC = 400V
V
GE = 15V, RG = 100Ω, L = 2.5mH
Rise time
17
22
td(off)
tf
TJ = 150°C
Turn-Off delay time
120
91
140
105
—
WF1
WF2
Fall time
Cies
Coes
Cres
RBSOA
VGE = 0V
Input Capacitance
190
23
V
CC = 30V
22
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
—
pF
µs
6.6
—
f = 1.0MHz
TJ = 150°C, IC = 15.6A, Vp = 600V
VCC=500V,VGE=+15V to 0V,RG = 100
TJ = 150°C, Vp = 600V, RG = 100Ω
VCC=360V,VGE = +15V to 0V
TJ = 150°C
4
FULL SQUARE
Ω
CT2
CT3
SCSOA
Short Circuit Safe Operating Area
10
—
—
WF4
17,18,19
20,21
CT4,WF3
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
38
77
44
84
µJ
ns
A
VCC = 400V, IF = 3.0A, L = 2.5mH
Ω
VGE = 15V, RG = 100
Irr
Diode Peak Reverse Recovery Current
4.8
5.3
Energy losses include "tail" and diode reverse recovery.
When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω.
footprint and soldering techniques refer to application note #AN-994.
2
www.irf.com