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RGR3B60KD2TRR PDF预览

RGR3B60KD2TRR

更新时间: 2024-01-08 13:45:17
品牌 Logo 应用领域
英飞凌 - INFINEON 电动机控制晶体管
页数 文件大小 规格书
14页 313K
描述
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

RGR3B60KD2TRR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.12最大集电极电流 (IC):7.8 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):211 ns
标称接通时间 (ton):35 nsBase Number Matches:1

RGR3B60KD2TRR 数据手册

 浏览型号RGR3B60KD2TRR的Datasheet PDF文件第2页浏览型号RGR3B60KD2TRR的Datasheet PDF文件第3页浏览型号RGR3B60KD2TRR的Datasheet PDF文件第4页浏览型号RGR3B60KD2TRR的Datasheet PDF文件第5页浏览型号RGR3B60KD2TRR的Datasheet PDF文件第6页浏览型号RGR3B60KD2TRR的Datasheet PDF文件第7页 
PD - 95036  
IRGR3B60KD2PbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
C
Features  
VCES = 600V  
• Low VCE (on) Non Punch Through IGBT Technology.  
• Low Diode VF.  
• 10µs Short Circuit Capability.  
• Square RBSOA.  
• Ultrasoft Diode Reverse Recovery Characteristics.  
• Positive VCE (on) Temperature Coefficient.  
• Lead-Free  
IC = 4.2A, TC=100°C  
tsc > 10µs, TJ=150°C  
VCE(on) typ. = 1.9V  
G
E
n-channel  
Benefits  
• Benchmark Efficiency for Motor Control.  
• Rugged Transient Performance.  
• Low EMI.  
• Excellent Current Sharing in Parallel Operation.  
D-Pak  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
Collector-to-Emitter Voltage  
V
A
VCES  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current (Ref.Fig.C.T.5)  
Clamped Inductive Load current  
Diode Continous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
7.8  
IC @ TC = 25°C  
4.2  
IC @ TC = 100°C  
15.6  
15.6  
6.0  
ICM  
ILM  
IF @ Tc = 25°C  
3.2  
IF @ Tc = 100°C  
15.6  
±20  
IFM  
V
VGE  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
52  
W
PD @ TC = 25°C  
21  
PD @ TC = 100°C  
-55 to +150  
TJ  
Storage Temperature Range  
Soldering Temperature Range, for 10 sec.  
°C  
TSTG  
300 (0.063 in. (1.6mm) from case)  
Thermal / Mechanical Characteristics  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
–––  
0.3  
Max.  
2.4  
Units  
Rθ  
Rθ  
Rθ  
Junction-to-Case- IGBT  
°C/W  
JC  
JC  
JA  
Junction-to-Case- Diode  
8.8  
Junction-to-Ambient, (PCB Mount)  
50  
Weight  
–––  
g
Wt  
www.irf.com  
1
2/23/04  

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