Datasheet > RGP10KHM3/54

RGP10KHM3/54

更新时间： 2024-12-01 22:55:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	69K
描述
DIODE GEN PURP 800V 1A DO204AL

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数据手册
替代型号

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RGP10KHM3/54 数据手册

RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M

www.vishay.com

Vishay General Semiconductor

Glass Passivated Junction Fast Switching Plastic Rectifier

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

SUPERECTIFIER^®

• Fast switching for high efficiency

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DO-41 (DO-204AL)

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

I_F(AV)

1.0 A

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

I_FSM

t_rr

30 A

150 ns, 250 ns, 500 ns

5.0 μA

MECHANICAL DATA

Case: DO-41 (DO-204AL), molded epoxy over glass body

I_R

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_F

1.3 V

T_Jmax.

Package

175 °C

DO-41 (DO-204AL)

Single

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Circuit configuration

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL RGP10A RGP10B RGP10D RGP10G RGP10J RGP10K RGP10M UNIT

Maximum repetitive peak

reverse voltage

V_RRM

100

200

400

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward rectified

current 0.375" (9.5 mm) lead length

at T_A= 55 °C

I_F(AV)

1.0

Peak forward surge current 8.3 ms

single half sine-wave

I_FSM

superimposed on rated load

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length T_A= 55 °C

I_R(AV)

100

μA

°C

Operating junction and storage

temperature range

T_J, T_STG

-65 to +175

Revision: 29-Apr-2020

Document Number: 88700

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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RGP10KHM3/54 替代型号

型号	品牌	替代类型	描述	数据表
RGP10K-M3/54	VISHAY	完全替代	DIODE GEN PURP 800V 1A DO204AL

与RGP10KHM3/54相关器件

型号	品牌	获取价格	描述	数据表
RGP10KHM3/73	VISHAY	获取价格	DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLASTI
RGP10K-M3/54	VISHAY	获取价格	DIODE GEN PURP 800V 1A DO204AL
RGP10K-M3/73	VISHAY	获取价格	DIODE GEN PURP 800V 1A DO204AL
RGP10K-T	MCC	获取价格	Rectifier Diode,
RGP10K-T/B	FRONTIER	获取价格	Rectifier Diode, 1 Element, 1A, Silicon
RGP10KT26A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41
RGP10KT26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41
RGP10KT50A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, D4, 2 PIN
RGP10KT50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, D4, 2 PIN
RGP10K-TP	MCC	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41, PLASTIC PACKAGE-2

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