Datasheet > RFP45N06LE

RFP45N06LE

更新时间： 2024-09-23 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关局域网
页数	文件大小	规格书
8页	429K
描述
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

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RFP45N06LE 数据手册

RFP45N06LE, RF1S45N06LESM

Data Sheet

October 1999

File Number 4076.2

45A, 60V, 0.028 Ohm, Logic Level

N-Channel Power MOSFETs

Features

• 45A, 60V

• r = 0.028Ω

These are N-Channel enhancement mode power MOSFETs

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers, and relay

drivers. These transistors can be operated directly from

integrated circuits.

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49177.

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

FP45N06L

F45N06LE

RFP45N06LE

RF1S45N06LESM

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in tape and reel i.e., RF1S45N06LESM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

DRAIN (FLANGE)

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7 8

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