Datasheet > RFP4N06L

RFP4N06L

更新时间： 2024-09-23 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
5页	39K
描述
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs

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RFP4N06L 数据手册

RFP4N05L, RFP4N06L

Data Sheet

July 1999

File Number 2876.2

4A, 50V and 60V, 0.800 Ohm, Logic Level,

N-Channel Power MOSFETs

Features

• 4A, 50V and 60V

• r = 0.800Ω

The RFP4N05L and RFP4N06L are N-Channel enhancement

mode silicon gate power field effect transistors designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

DS(ON)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,

TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA09520.

Ordering Information

PART NUMBER

RFP4N05L

RFP4N06L

PACKAGE

TO-220AB

BRAND

RFP4N05L

RFP4N06L

• Majority Carrier Device

• Related Literature

NOTE: When ordering, include the entire part number.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEL TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

6-274

12 3 4 5

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