Datasheet > RFN3BM6S_16

RFN3BM6S_16

更新时间： 2024-10-03 01:23:47

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
8页	719K
描述
Super Fast Recovery Diode

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中文翻译

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数据手册

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RFN3BM6S_16 数据手册

Super Fast Recovery Diode

RFN3BM6S

Data Sheet

lSeries

lDimensions (Unit : mm)

lLand Size Figure (Unit : mm)

6.0

Standard Fast Recovery

lApplication

1.6

General rectification

2.3 2.3

TO-252

lFeatures

Cathode

1) Low switching loss

lStructure

ROHM : TO-252

JEITA : SC-63

2) Low forward voltage

: Manufacture Date

Open

Anode

lConstruction

lTaping Dimensions (Unit : mm)

2.0±0.05

φ 1.55±0.1

f1.550.1

4.0±0.1

8.0±0.1

0.4±0.1

Silicon epitaxial planar type

ꢀꢀꢀꢀꢀ

φ 3.0±0.1

f3.00.1

6.8±0.1

8.0±0.1

2.7±0.2

lAbsolute Maximum Ratings (T_c= 25°C)

Parameter

Symbol

Conditions

Limits

Unit

V_RM

V_R

I_o

Duty≦0.5

600

Repetitive peak reverse voltage

Reverse voltage

Direct voltage

60Hz half sin wave , Resistive load T_c=112°C

60Hz half sin wave ,Non-repetitive at T_j=25°C

Average rectified foward current

Forward current surge peak

Operating junction temperature

Storage temperature

I_FSM

T_j

150

°C

T_stg

-55 to +150 °C

lElectrical Characteristics (T_j= 25°C)

Parameter

Forward voltage

Conditions

I_F=3A

Symbol

V_F

Min. Typ. Max. Unit

1.35 1.55

0.05 10

V_R=600V

I_R

Reverse current

I_F=0.5A, I_R=1A, Irr=0.25×I_R

Junction to case

Reverse recovery time

Thermal resistance

trr

R_th(j-c)

°C / W

6.0

www.rohm.com

2016.02 - Rev.C

1/4

12 3 4 5 6 7 8

中文翻译

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