Datasheet > RFN4RSM2STF

RFN4RSM2STF

更新时间： 2024-10-03 17:15:43

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
10页	3057K
描述
RFN4RSM2STF is a silicon epitaxial planar type ultra fast recovery diode featuring low V_F and low switching loss. Ideal for general rectification applications.

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RFN4RSM2STF 数据手册

RFN4RSM2STF

Ultra Fast Recovery Diode

(AEC-Q101 Qualified)

Data sheet

●Outline

200

FSM

trr

(typ)

●Features

●Inner Circuit

Low forward voltage

Low switching loss

High current overload capacity

●Application

●Packaging Specifications

Packing

General rectification

Embossed Tape

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

330

4000

●Structure

Silicon epitaxial planar

Taping Code

TL1

Marking

RFN4RSM2S

●Absolute Maximum Ratings (T =25℃ unless otherwise specified)

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

Duty≦0.5

200

Reverse voltage

Reverse direct voltage

200

60Hz half sinwaveform

resistiveload, T_c=165℃Max

Average rectified forward current

Peak forward surge current

Junction temperture

60Hzhalf sin waveform

FSM

non-repetitive, T=25℃

175

℃

stg

Storage temperature

-55 ～ 175

℃

www.rohm.com

1/7

2024/01/12_Rev.001

12 3 4 5 6 7...10

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