Datasheet > RFN55S

RFN55S

更新时间： 2024-11-26 06:07:35

品牌	Logo	应用领域
MICRONETICS		微波
页数	文件大小	规格书
3页	87K
描述
FULLBAND HIGH ENR MICROWAVE NOISE SOURCES

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RFN55S 数据手册

ULLBAND

IGH ENR MICROWAVE

NOISE

SOURCES

S, C AND X BANDS

6.2008

DESCRIPTION

Micronetics line of fullband noise

sources are specially designed for built-

in test and calibration where there is

significant path loss between the noise

source and the device.

This family of high output fullband noise

sources with their compact size are spe-

cially designed for ease of integration

into microwave systems.

With their rugged and stable design, the

heart of these noise sources is a small

chip and wire hermetic noise module.

This is embedded in the housing with a

precision launch to the coaxial jack.

This design gives is much more stable

and rugged than traditional coaxial

noise sources which rely on pill pack-

aged diodes and beryllium copper bel-

low assemblies which are not only are

less reliable, but use hazardous materi-

als.

FULLBAND OUTPUT CHARACTERISTICS

FOR USE IN SYSTEMS

RF OUTPUT

MODEL

FREQUENCY

EXCESS NOISE FLATNESS

RATIO (dB)

RFN55L

RFN55S

RFN55C

RFN55C1

RFN55C2

RFN55X

1.0 to 2.0 GHz

2.0 to 4.0 GHz

4.0 to 8.0 GHz

3.95 to 5.85 GHz

5.85 to 8.20 GHz

8.0 to 12.4 GHz

55(MIN)

2.0 dB P-P

4.0 dB P-P

CONFIGURABLE TO YOUR

REQUIREMENTS

Micronetics fullband noise sources are

based on a coaxial design as the base

part. As standard options, noise

sources can be ordered with either

WAVEGUIDE CHART

• Coaxial Isolator

• Waveguide Output

• Waveguide Isolator

MODEL

FREQUENCY

WAVEGUIDE

RFN55C1

3.95 to 5.85GHz

5.85 to 8.20GHz

8.20 to 12.4GHz

WR-187

RFN55C2

RFN55X

WR-137

WR-90

SPECIFICATIONS

-Operating Temp: -40 to +85 C

COMMON APPLICATIONS

-Storage Temp:

-Supply Voltage:

-Current Draw:

-Output Impedance: 50 ohm

-Peak Factor: 5:1

-65 to +125 C

Radar Built-in Test/Calibration; where there is significant path loss between the noise

source and the receiver. For example, a 30dB coupler can be used to feed the test

noise signal into the receiver which minimized noise figure while still allowing 25 dB

ENR.

+15V +/- 1.5V

@ 200 mA (Max)

Jamming Systems; these high output devices, when used in conjunction with power

amplifiers, offer an efficient means to jam RF/microwave signals.

Antennal Calibration; high output noise can be used for antenna calibration to counter

the effects of over-the-air transmission loss.

MICRONETICS / 26 HAMPSHIRE DRIVE / HUDSON, NH 03051 / TEL: 603-883-2900 / FAX: 603-882-8987

WEB: WWW.MICRONETICS.COM

12 3

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与RFN55S相关器件

型号	品牌	获取价格	描述	数据表
RFN55X	MICRONETICS	获取价格	FULLBAND HIGH ENR MICROWAVE NOISE SOURCES
RFN5B2S	ROHM	获取价格	Super Fast Recovery Diode
RFN5BGE2S	ROHM	获取价格	RFN5BGE2S是一般整流用途的快速恢复二极管。
RFN5BGE3S	ROHM	获取价格	RFN5BGE3S是一般整流用的快速恢复二极管。
RFN5BGE6S	ROHM	获取价格	RFN5BGE6S是一般整流用的快速恢复二极管。
RFN5BM2S	ROHM	获取价格	Super Fast Recovery Diode
RFN5BM2S_16	ROHM	获取价格	Super Fast Recovery Diode
RFN5BM2SFH	ROHM	获取价格	Super Fast Recovery Diode
RFN5BM2SFH_16	ROHM	获取价格	Super Fast Recovery Diode
RFN5BM3S	ROHM	获取价格	Super Fast Recovery Diode

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