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RFB18N10CS PDF预览

RFB18N10CS

更新时间: 2024-11-05 19:54:39
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 834K
描述
18A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TS-001AA

RFB18N10CS 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.36其他特性:CURRENT SENSING
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN TEMPERATURE SENSOR
最小漏源击穿电压:100 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TS-001AAJESD-30 代码:R-PSFM-T5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):56 A
认证状态:COMMERCIAL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RFB18N10CS 数据手册

 浏览型号RFB18N10CS的Datasheet PDF文件第2页浏览型号RFB18N10CS的Datasheet PDF文件第3页浏览型号RFB18N10CS的Datasheet PDF文件第4页浏览型号RFB18N10CS的Datasheet PDF文件第5页浏览型号RFB18N10CS的Datasheet PDF文件第6页 

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