Datasheet > RF340

RF340

更新时间： 2024-11-20 22:31:23

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	59K
描述
10A, 400V, 0.550 Ohm, N-Channel Power MOSFET

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RF340 数据手册

IRF340

Data Sheet

March 1999

File Number 2307.3

10A, 400V, 0.550 Ohm, N-Channel

Power MOSFET

Features

• 10A, 400V

• r = 0.550Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is designed, tested and guaranteed to

withstand a speciﬁc level of energy in the breakdown

avalanche mode of operation. These MOSFETs are

designed for applications such as switching regulators,

switching converters, motor drivers, relay drivers, and drivers

for high power bipolar switching transistors requiring high

speed and low gate drive power. These types can be

operated directly from integrated circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Formerly developmental type TA17424.

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

IRF340

Symbol

IRF340

TO-204AE

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AE

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

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