Datasheet > RF--35

RF--35

更新时间： 2024-11-11 12:46:51

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管
页数	文件大小	规格书
20页	1104K
描述
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs

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RF--35 数据手册

Document Number: MRF6VP3091N

Rev. 1, 12/2011

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

MRF6VP3091NR1

MRF6VP3091NR5

MRF6VP3091NBR1

MRF6VP3091NBR5

Enhancement--Mode Lateral MOSFETs

Designed for commercial and industrial broadband applications with

frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

applications.

•

Typical Performance (Broadband Reference Circuit): V_DD= 50 Volts,

_DQ= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF.

Output

Signal PAR Shoulder

IMD

470--860 MHz, 90 W, 50 V

BROADBAND

RF POWER LDMOS TRANSISTORS

out

Signal Type

(W)

(MHz) (dB)

(%)

31.0

26.4

27.6

(dB)

7.9

(dBc)

--27.8

--37.6

--30.4

DVB--T (8k OFDM) 18 Avg.

470

650

860

21.8

21.6

21.7

8.4

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

7.1

PLASTIC

MRF6VP3091NR1(NR5)

Features

•

Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,

90 Watts CW Output Power

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Input Matched for Ease of Use

Qualified Up to a Maximum of 50 V_DDOperation

Excellent Thermal Stability

Device can be used Single--Ended or in a Push--Pull Configuration

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

PLASTIC

MRF6VP3091NBR1(NBR5)

PARTS ARE PUSH--PULL

•

225°C Capable Plastic Package

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Gate 1

Gate 2

Drain 1

Drain 2

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +115

--6.0, +10

--65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

DSS

Gate--Source Voltage

(Top View)

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

Note: Exposed backside of the package is

the source terminal for the transistor.

°C

Figure 1. Pin Connections

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 76°C, 18 W CW, 50 Vdc, I

Case Temperature 80°C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz

= 350 mA, 860 MHz

0.79

0.82

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

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