Datasheet > RF2192_06

RF2192_06

更新时间： 2024-10-26 04:08:27

品牌	Logo	应用领域
威讯 - RFMD		放大器功率放大器
页数	文件大小	规格书
10页	174K
描述
3V 900MHz LINEAR POWER AMPLIFIER

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中文翻译

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RF2192_06 数据手册

RF2192

3V 900MHz LINEAR POWER AMPLIFIER

RoHS Compliant & Pb-Free Product

Typical Applications

• 3V CDMA/AMPS Cellular Handsets

• 3V JCDMA Cellular Handsets

• 3V TDMA/GAIT Cellular Handsets

• 3V CDMA 450MHz Band Handsets

• Portable Battery-Powered Equipment

• 3V CDMA2000 Cellular Handsets

Product Description

The RF2192 is a high-power, high-efficiency linear ampli-

fier IC targeting 3V handheld systems. The device is

manufactured on an advanced Gallium Arsenide Hetero-

junction Bipolar Transistor (HBT) process, and has been

designed for use as the final RF amplifier in dual-mode

3V CDMA/AMPS and CDMA2000 handheld digital cellu-

lar equipment, spread-spectrum systems, and other

applications in the 800MHz to 960MHz band. The

RF2192 has a low power mode to extend battery life

under low output power conditions. The device is pack-

aged in a 16-pin, 4mmx4mm QFN.

0.10

2 PLCS

C B

-B-

4.00

0.10

2 PLCS

C B

3.75

2.00

0.80

TYP

1.60

2 PLCS

1.50

SQ.

3.75

4.00

0.75

0.50

0.10

C A

0.10

2 PLCS

C A

2.00

INDEX AREA

2 PLCS

0.45

0.28

Dimensions in mm.

3.20

2 PLCS

0.10M C A B

Shaded pin is lead 1.

12°

MAX

1.00

0.90

0.05

0.00

0.75

0.65

Optimum Technology Matching® Applied

Package Style: QFN, 16-Pin, 4x4

Si BJT

GaAs HBT

SiGe HBT

GaN HEMT

GaAs MESFET

Si Bi-CMOS

InGaP/HBT

Si CMOS

Features

SiGe Bi-CMOS

• Single 3V Supply

• 29dBm Linear Output Power

• 37% Linear Efficiency

• Low Power Mode

16 15 14 13

• 45 mA idle current

GND

RF OUT

• 47% Peak Efficiency 31dBm Output

GND

RF IN

Ordering Information

RF2192

3V 900MHz Linear Power Amplifier

RF2192PCBA-41X Fully Assembled Evaluation Board

RF Micro Devices, Inc.

7628 Thorndike Road

Greensboro, NC 27409, USA

Tel (336) 664 1233

Fax (336) 664 0454

http://www.rfmd.com

Functional Block Diagram

Rev A8 060918

2-327

12 3 4 5 6 7...10

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