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RES100N03 PDF预览

RES100N03

更新时间: 2024-11-12 03:37:19
品牌 Logo 应用领域
罗姆 - ROHM 晶体开关晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
4页 44K
描述
Switching (30V, 10A)

RES100N03 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N其他特性:GATE PROTECTED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.021 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RES100N03 数据手册

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RES100N03  
Transistors  
Switching (30V, 10A)  
RES100N03  
zExternal dimensions (Units : mm)  
zFeatures  
1) Low Qg.  
2) Low on-resistance.  
Max.1.75  
3) Exellent resistance to damage from static electricity.  
(
(
)
)
(
)
5
4
(
1
)
8
+
0.15  
1.5 0.1  
3.9 0.15  
+
+
6.0 0.3  
zStructure  
Silicon N-channel  
MOS FET  
+
0.5 0.1  
Each lead has same dimensions  
ROHM : SOP8  
zEquivalent circuit  
(8) (7) (6) (5)  
(8) (7) (6) (5)  
(4)  
(1) (2) (3) (4)  
(1) Source  
(2) Source  
(3) Source  
(4) Gate  
(5) Drain  
(6) Drain  
(7) Drain  
(8) Drain  
(1) (2) (3)  
Gate Protection Diode.  
A protection diode is included between the gate  
and the source terminals to protect the diode  
against static electricity when the product is in  
use.Use a protection circuit when the fixed  
voltage are exceeded.  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
Limits  
30  
Unit  
V
V
DSS  
V
GSS  
±20  
10  
V
Continuous  
I
D
A
Drain Current  
Pulsed  
I
DP  
DR  
DRP  
40  
A
Continuous  
Pulsed  
I
10  
A
Reverse Drain  
Current  
I
40  
A
Continuous  
Pulsed  
I
s
1.3  
A
Source Current  
(Body Diode)  
I
sp  
5.2  
A
Total Power Dissipation (TC=25°C  
)
P
D
2
W
°C  
°C  
Channel Temperature  
Tch  
150  
55~+150  
Storage Temperature  
Tstg  
PW10µs, Duty cycle1%  

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