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RDHA701CD10A2NX PDF预览

RDHA701CD10A2NX

更新时间: 2024-10-28 21:10:23
品牌 Logo 应用领域
英飞凌 - INFINEON 输出元件光电
页数 文件大小 规格书
5页 122K
描述
Transistor Output SSR, 2-Channel, 1000V Isolation, HERMETIC SEALED, CERAMIC PACKAGE-8

RDHA701CD10A2NX 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETIC SEALED, CERAMIC PACKAGE-8Reach Compliance Code:compliant
HTS代码:8541.40.95.00风险等级:5.43
配置:SEPARATE, 2 ELEMENTS最大正向电流:0.04 A
输入类型:DC最大绝缘电压:1000 V
元件数量:2最大通态电流:1 A
最大通态电阻:0.8 Ω最高工作温度:125 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT SSR
输出电路类型:MOSFET总高度:7 mm
总长度:9.65 mm子类别:Solid State Relays
Base Number Matches:1

RDHA701CD10A2NX 数据手册

 浏览型号RDHA701CD10A2NX的Datasheet PDF文件第2页浏览型号RDHA701CD10A2NX的Datasheet PDF文件第3页浏览型号RDHA701CD10A2NX的Datasheet PDF文件第4页浏览型号RDHA701CD10A2NX的Datasheet PDF文件第5页 
PD-97578B  
Radiation Hardended, 100V,  
Dual 1.0A, Solid State Relay  
RDHA701CD10A2NX  
Product Summary  
Part Number  
Voltage Current Configuration Rad Level  
RDHA701CD10A2NX  
100V  
1.0A  
Dual DC  
100K  
Description  
Features:  
The RDHA701CD10A2NX is a radiation hardened  
dual Solid State Relay in a hermatic package. It is  
configured as dual single pole single throw (SPST)  
normally open relay. This device is characterized  
for 100KRad (Si) total ionizing dose. The output  
MOSFET utilizes International Rectifier’s R5  
Technology.  
n
n
n
Total Dose Capability to 100KRad (Si)  
Optically Coupled  
1000VDC Input-to-Output, Channel-to-Channel,  
and Pin-to-Case Isolation  
Hermetically Sealed Ceramic Package  
n
Absolute Maximum Ratings @ Tj = 25°C (unless otherwise specified)  
Parameter  
Symbol  
Value  
100  
Units  
V
V
Output Withstand Voltage  
Output Current  
O (OFF)  
I
1.0  
A
O
I
40  
Input Forward Current  
F
mA  
I
100  
Peak Input Forward Current (t 1.0ms)  
F pk  
V
R
5.0  
V
Peak Input Reverse Voltage (t 1.0ms)  
P
Power Dissipation  
1.0  
W
DISS  
T
J
Operating Temperature Range  
Storage Temperature Range  
-55 to +125  
-65 to +150  
T
S
°C  
g
Lead Temperature (soldering 10sec)  
Weight  
TL  
300  
0.8 (typ)  
For notes, please refer to page 2  
www.irf.com  
1
05/18/12  

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