Datasheet > RDD050N20

RDD050N20

更新时间： 2024-11-13 03:37:27

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	158K
描述
10V Drive Nch MOSFET

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中文翻译

获取价格

数据手册

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RDD050N20 数据手册

RDD050N20

Transistors

10V Drive Nch MOSFET

RDD050N20

zDimensions (Unit : mm)

zStructure

Silicon N-channel

MOSFET

CPT3

zFeatures

1) Low on-resistance.

2) Low input capacitance.

3) Exellent resistance to damage from static electricity.

(1)Base(Gate)

(2)Collector(Drain)

(3)Emitter(Source)

zApplication

Switching

zPackaging specifications

zEquivalent Circuit

Package

Taping

Type

Code

∗2

Basic ordering unit (pieces)

2500

RDD050N20

∗1 BODY DIODE

∗2 GATE PROTECTION

DIODE

∗1

(1)GATE

(2)DRAIN

(3)SOURCE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

(1)

(2)

(3)

200

∗A protection diode is included between the gate and

the source terminals to protect the diode against static

electricity when the product is in use. Use the protection

circuit when the fixed voltages are exceeded.

Continuous

Pulsed

Drain Current

∗1

I_DP

Continuous

Pulsed

I_S

Source Current

(Body Diode)

∗1

∗2

I_SP

Avalanche Current

Avalanche Energy

I_AS

E_AS

P_D

°C

Total Power Dissipation (T_C=25°C)

Channel Temperature

T_ch

150

T_stg

Storage Temperature

−55 to +150

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 L 4.5mH, V^DD=50V, R =25Ω, 1Pulse, Tch=25°C

zThermal resistance

Parameter

Channel to case

Symbol

Rth(ch-c)

Limits

6.25

Unit

°C/W

1/5

12 3 4 5 6

中文翻译

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