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RD8.2UMB1-T1 PDF预览

RD8.2UMB1-T1

更新时间: 2024-11-14 15:49:27
品牌 Logo 应用领域
日电电子 - NEC 测试光电二极管
页数 文件大小 规格书
8页 63K
描述
Zener Diode, 8.2V V(Z), 2.52%, 0.15W, Silicon, Unidirectional, ULTRA SUPER MINIMOLD PACKAGE-2

RD8.2UMB1-T1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.47
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.15 W认证状态:Not Qualified
标称参考电压:8.2 V表面贴装:YES
技术:ZENER端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2.52%
工作测试电流:5 mABase Number Matches:1

RD8.2UMB1-T1 数据手册

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DATA SHEET  
ZENER DIODES  
RD2.0UM to RD39UM  
ZENER DIODES  
2PIN ULTRA SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
Type RD2.0UM to RD39UM Series are 2-pin  
Ultra Super Mini Mold Package zener diodes  
possessing an allowable power dissipation of 150  
mW.  
(Unit: mm)  
2.1±0.1  
1.3±0.1  
FEATURES  
• Sharp Breakdown characteristics  
• VZ; Applied E24 standard  
Cathode  
Indication  
APPLICATIONS  
Circuits for Constant Voltage, Constant Current,  
Waveform clipper, Surge absorber, etc.  
MAXIMUM RATINGS (TA = 25 °C)  
Power Dissipation  
P
150 mW  
100 mA  
Forward Current  
IF  
Reverse Surge Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
85 W (at t = 10 µs/1 pulse) See Fig. 6.  
150 °C  
Tstg  
–55 to +155 °C  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. D13562EJ2V0DS00 (2nd edition)  
(Previous No. DC-2136)  
Date Published March 1999 N CP(K)  
Printed in Japan  
1993  
©

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