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RD8.2MB1 PDF预览

RD8.2MB1

更新时间: 2024-11-09 21:11:11
品牌 Logo 应用领域
日电电子 - NEC 测试光电二极管
页数 文件大小 规格书
8页 134K
描述
Zener Diode, 7.93V V(Z), 2.14%, 0.2W, Silicon, Unidirectional, MINIMOLD, SC-59, 3 PIN

RD8.2MB1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.7配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.2 W
认证状态:Not Qualified标称参考电压:7.93 V
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:2.14%工作测试电流:5 mA
Base Number Matches:1

RD8.2MB1 数据手册

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DATA SHEET  
ZENER DIODES  
RD2.0M to RD47M  
ZENER DIODES  
200 mW 3-PIN MINI MOLD  
<R>  
DESCRIPTION  
PACKAGE DIMENSIONS (Unit: mm)  
Type RD2.0M to RD47M Series are planar type zener diodes  
processing an allowable power dissipation of 200 mW.  
2.8 ꢀ.2  
+ꢀ.1  
–ꢀ.15  
ꢀ.65  
1.5  
FEATURES  
• Planar process  
2
• VZ; Applied E24 standard.  
3
1
APPLICATIONS  
Circuits for,  
Marking  
Constant Voltage, Constant Current,  
Waveform clipper, Surge absorber, etc.  
<R>  
MAXIMUM RATINGS (TA = 25°C)  
Power Dissipation  
Forward Current  
P
IF  
200  
100  
150  
mW  
mA  
°C  
Junction Temperature  
Storage Temperature  
Peak Reverse Power  
Tj  
1 . NC  
Tstg  
PRSM  
55 to +150 °C  
100 W (tT = 10 μs)  
2 . Anode : A SC-59 (JEITA)  
3 . Cathode: K  
A
2
K
3
1
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14716EJ7V0DS00 (7th edition)  
Date Published March 2006 NS CP(K)  
Printed in Japan  
1995  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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