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RD6.8SLN3 PDF预览

RD6.8SLN3

更新时间: 2024-11-05 15:49:27
品牌 Logo 应用领域
日电电子 - NEC 测试光电二极管
页数 文件大小 规格书
8页 55K
描述
Zener Diode, 6.8V V(Z), 2.44%, 0.2W, Silicon, Unidirectional

RD6.8SLN3 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:R-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.31其他特性:LOW NOISE
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:6.8 V表面贴装:YES
技术:ZENER端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2.44%
工作测试电流:0.5 mABase Number Matches:1

RD6.8SLN3 数据手册

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DATA SHEET  
ZENER DIODES  
RD4.7SL to RD39SL  
ZENER DIODES  
200 mW 2 PIN SUPER MINI MOLD  
DESCRIPTION  
PACKAGE DIMENSIONS  
Type RD4.7SL to RD39SL Series are 2 PIN Super Mini  
Mold Package zener diodes possessing an allowable power  
dissipation of 200 mW featuring low noise and sharp break-  
down characteristic. They are intended for use in audio  
equipment, instrument equipment.  
(in millimeters)  
2.5±0.15  
1.7±0.1  
FEATURES  
Low Noise  
Sharp Breakdown characteristic.  
Vz: Applied E24 standard.  
Cathode  
Indication  
APPLICATIONS  
Circuits for Constant Voltage, Constant Current, Waveform  
Clipper, Surge absorber, etc.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Power Dissipation  
P
200 mW  
100 mA  
Forward Current  
IF  
Reverse Surge Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
2.2W (at t=10 µs/1 pulse) Show fig. 8  
150 °C  
Tstg  
–55 to +150 °C  
Document No. D11445EJ2V0DS00 (2nd edition)  
Date Published December 1998 N CP(K)  
Printed in Japan  
1996  
©

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