RD3P07BBH
Nch 100V 80A Power MOSFET
Datasheet
llOutline
VDSS
100V
7.7mΩ
±80A
89W
DPAK
RDS(on)(Max.)
TO-252
ID
PD
llInner circuit
llFeatures
1) Low on - resistance
2) High Power Package(TO-252)
3) Pb-free plating ; RoHS compliant
4) Halogen free
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
330
16
llApplication
Tape width (mm)
Quantity (pcs)
Taping code
Marking
Type
Switching
2500
TL1
RD3P07BBH
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)
a
Parameter
Symbol
Value
Unit
V
VDSS
Drain - Source voltage
100
±80
*1
Silicon limit (V =10V)
ID
A
GS
Continuous drain current
*2
Tc = 25°C (V =10V)
ID
±70
A
GS
*3
IDP
Pulsed drain current
Gate - Source voltage
±320
±20
A
VGSS
V
*4
IAS
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
23
A
*4
EAS
43
mJ
W
℃
℃
*2
PD
89
Tj
Junction temperature
150
Tstg
Operating junction and storage temperature range
-55 to +150
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20221122 - Rev.002