RD3S100AAFRA
Datasheet
ꢀꢀNch 190V 10A Power MOSFET
ꢀꢀ
llOutline
ꢀ
VDSS
190V
182mΩ
±10A
DPAK
RDS(on)(Max.)
TO-252
ID
ꢀ
PD
85W
ꢀ
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llFeatures
llInner circuit
1) Low on-resistance.
2) Fast switching speed.
3) Parallel use is easy.
4) RoHS compliant
5) AEC-Q101 Qualified
llApplication
llPackaging specifications
Switching Power Supply
Packing
Embossed Tape
TL
Taping code
Marking
RD3S100AA
2500
Quantity (pcs)
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)
a
Parameter
Drain - Source voltage
Symbol
Value
190
Unit
V
VDSS
*1
Continuous drain current (Tc = 25°C)
Pulsed drain current
ID
±10
A
*2
IDP
±40
A
VGSS
Gate - Source voltage
±20
V
*3
IAS
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
5.0
A
*3
EAS
8.33
mJ
W
℃
℃
PD
Tj
85
150
Tstg
Operating junction and storage temperature range
-55 to +150
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20190731 - Rev.002