Datasheet > RD3R02BBH (新产品)

RD3R02BBH (新产品)

更新时间： 2023-09-03 20:24:58

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
13页	2744K
描述
RD3R02BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.

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RD3R02BBH (新产品) 数据手册

RD3R02BBH

Nch 150V 20A Power MOSFET

Datasheet

llOutline

V_DSS

150V

81mΩ

±20A

50W

DPAK

R_DS(on)(Max.)

TO-252

I_D

P_D

llFeatures

llInner circuit

1) Low on - resistance

2) High Power Package(TO-252)

3) Pb-free plating ; RoHS compliant

4) Halogen Free

llApplication

llPackaging specifications

Embossed

Tape

Switching

Packing

Reel size (mm)

330

Tape width (mm)

Quantity (pcs)

Taping code

Marking

Type

2500

TL1

RD3R02BBH

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

Unit

V_DSS

150

±20

= 10V

I_D

Continuous drain current

Pulsed drain current

I_DP

±80

V_GSS

Gate - Source voltage

Avalanche current, single pulse

Avalanche energy, single pulse

Power dissipation

±20

I_AS

E_AS

6.6

℃

P_D

T_j

Junction temperature

150

T_stg

Operating junction and storage temperature range

-55 to +150

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1/11

20221122 - Rev.002

12 3 4 5 6 7...13

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