Datasheet > RD15HVF1_11

RD15HVF1_11

更新时间： 2024-11-18 11:59:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
10页	531K
描述
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

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RD15HVF1_11 数据手册

< Silicon RF Power MOS FET (Discrete) >

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

OUTLINE DRAWING

DESCRIPTION

1.3+/-0.4

RD15HVF1 is a MOS FET type transistor specifically

designed for VHF/UHF High power amplifiers applica

-tions.

9.1+/-0.7

3.6+/-0.2

FEATURES

High power and High Gain:

1.2+/-0.4

Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz

Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz

High Efficiency: 60%typ. on VHF Band

High Efficiency: 55%typ. on UHF Band

0.8+0.10/-0.15

0.5+0.10/-0.15

2.5 2.5

5deg

PINS

1:GATE

9.5MAX

2:SOURCE

3:DRAIN

APPLICATION

note:

For output stage of high power amplifiers in VHF/UHF

Torelance of no designation means typical value.

Dimension in mm.

Band mobile radio sets.

RoHS COMPLIANT

RD15HVF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after the lot

marking.

This product include the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Oct．2011

12 3 4 5 6 7...10

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