Datasheet > RD13EB4

RD13EB4

更新时间： 2024-11-11 04:08:39

品牌	Logo	应用领域
日电电子 - NEC		稳压二极管
页数	文件大小	规格书
12页	96K
描述
500 mW DHD ZENER DIODE DO-35

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RD13EB4 数据手册

DATA SHEET

ZENER DIODES

RD2.0E to RD200E

500 mW DHD ZENER DIODE

(DO-35)

DESCRIPTION

PACKAGE DIMENSIONS

NEC Type RD2.0E to RD200E Series are planar type zener diode in the

popular DO-35 package with DHD (Double Heatsink Diode) construction

having allowable power dissipation of 500 mW. To meet various application

at customers, V^z(zener voltage) is classified into the tight tolerance under

the specific suffix (B, B1 to B7).

(in millimeters)

0.5

FEATURES

Cathode

indication

•

DHD (Double Heatsink Diode) Construction

Vz: Applied E24 standard (RD130E to RD200E: 10 volts step)

DO-35 Glass sealed package

2.0 MAX.

ORDER INFORMATION

RD2.0 E to RD39E with suffix “B1”, “B2”, “B3”, “B4”, “B5”, “B6” or “B7”

should be applied for orders for suffix “B”.

APPLICATIONS

Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc.

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Forward Current

200 mA

500 mW

Power Dissipation

Surge Reverse Power

Junction Temperature

Storage Temperature

PRSM

T^j

100 W (t = 10 µs)

175 ˚C

to see Fig. 17

Tstg

–65 to +175 ˚C

Document No. D10213EJ5V0DS00 (5th edition)

Date Published December 1998 N CP(K)

Printed in Japan

1981

12 3 4 5 6 7...12

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与RD13EB4相关器件

型号	品牌	获取价格	描述	数据表
RD13EB5	NEC	获取价格	500 mW DHD ZENER DIODE DO-35
RD13EB6	NEC	获取价格	500 mW DHD ZENER DIODE DO-35
RD13EB7	NEC	获取价格	500 mW DHD ZENER DIODE DO-35
RD13EB-AZ	RENESAS	获取价格	RD13EB-AZ
RD13EB-T1-AZ	RENESAS	获取价格	RD13EB-T1-AZ
RD13EB-T4-AZ	RENESAS	获取价格	RD13EB-T4-AZ
RD13ES	NEC	获取价格	400 mW DHD ZENER DIODE DO-34
RD13ES	MCC	获取价格	Zener Diode, 12.885V V(Z), 6.01%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2
RD13ESA	MCC	获取价格	Zener Diode, 12.43V V(Z), 2.57%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2
RD13ESAB	RENESAS	获取价格	12.9V, 0.4W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34, GLASS PACKAGE-2