Datasheet > RCR1521SI

RCR1521SI

更新时间： 2024-11-01 00:04:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	226K
描述
P-Channel Enhancement Mode Field Effect Transistor

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RCR1521SI 数据手册

RCR1521SI

P-Channel Enhancement Mode Field Effect Transistor

Features

Pin Configurations

High density Cell Design for Low R_DS(ON)

Voltage controlled small signal switch

Reliable and Rugged

General Description

These P-Channel enhancement mode field effect transistors

are produced using high cell density, DMOS technology.

Package Information

Absolute Maximum Ratings @T_A=25℃ unless otherwise noted

Parameter Symbol

Ratings

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Continuous)

Drain Current (Pulse)

Power Dissipation

V_DSS

V_GSS

I_D

±8

-1.9

I_DP

-10

P_D

350

℃

Operating Temperature

Storage Temperature

T_J

-55~150

T_STG

1 / 4

YKKJPD-V2.8

12 3 4

中文翻译

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