Document Number: MMA25312B
Rev. 0, 9/2012
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
MMA25312BT1
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA25312B is a high efficiency InGaP HBT amplifier designed for
use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and
wireless broadband mesh networks. It is suitable for applications with
frequencies from 2300 to 2700 MHz using simple external matching
components with a 3 to 5 volt supply.
2300--2700 MHz, 26 dB
31 dBm
InGaP HBT
Features
•
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Frequency: 2300--2700 MHz
P1dB: 31 dBm @ 2500 MHz
Power Gain: 26 dB @ 2500 MHz
OIP3: 40 dBm @ 2500 MHz
Active Bias Control (On--chip)
Single 3 to 5 Volt Supply
Single--ended Power Detector
Cost--effective QFN Surface Mount Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
CASE 2131--01
QFN 3×3
PLASTIC
Table 1. Typical CW Performance (1)
Table 2. Maximum Ratings
Rating
Supply Voltage
Symbol
Value
Unit
V
Characteristic
Symbol 2300 2500 2700
Unit
dB
MHz
MHz
MHz
V
6
550
CC
CC
Small--Signal Gain
(S21)
G
26
26
24.5
p
Supply Current
I
mA
dBm
°C
RF Input Power
P
30
in
Input Return Loss
(S11)
IRL
ORL
P1dB
-- 1 4
-- 11
30
-- 1 2
-- 1 3
31
-- 1 2
-- 1 5
29.8
dB
Storage Temperature Range
T
stg
--65 to +150
150
(2)
Junction Temperature
T
J
°C
Output Return Loss
(S22)
dB
2. For reliable operation, the junction temperature should not
exceed 150°C.
Power Output @
1dB Compression
dBm
1. V
= V
= V
= 5 Vdc, T = 25°C, 50 ohm system, CW
BIAS A
CC1
CC2
Application Circuit
Table 3. Thermal Characteristics
(3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
92
°C/W
JC
Case Temperature 91°C, V = V
= V
= 5 Vdc
BIAS
CC1
CC2
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
MMA25312BT1
RF Device Data
Freescale Semiconductor, Inc.
1