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RBU1002M-HF-C PDF预览

RBU1002M-HF-C

更新时间： 2024-10-30 13:02:19
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
3页 229K
描述
Bridge Rectifier Diode,

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RBU1002M-HF-C 技术参数

生命周期：Active包装说明：R-PSFM-T4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.69Is Samacsys：N
其他特性：UL LISTED最小击穿电压：100 V
外壳连接：ISOLATED配置：BRIDGE, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：BRIDGE RECTIFIER DIODE
JESD-30 代码：R-PSFM-T4最大非重复峰值正向电流：200 A
元件数量：4相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT参考标准：TS 16949
最大重复峰值反向电压：100 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

RBU1002M-HF-C 数据手册

 浏览型号RBU1002M-HF-C的Datasheet PDF文件第2页浏览型号RBU1002M-HF-C的Datasheet PDF文件第3页 
RBU1001M  
THRU  
RBU1007M  
SINGLE-PHASE GLASS PASSIVATED  
SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Ampere  
FEATURES  
* Low leakage  
* Low forward voltage  
* Silver-plated copper leads  
* Surge overload rating: 200 amperes peak  
* Mounting position: Any  
RBU  
.880 (22.3)  
.860 (21.8)  
MECHANICAL DATA  
.140 (3.56)  
.130 (3.30)  
* Epoxy: Device has UL flammability classification 94V-O  
.160 (4.1)  
.140 (3.5)  
.512 (13.0)  
.085 (2.16)  
.075 (1.90)  
.100 (2.54)  
.085 (2.16)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
.022 (0.56)  
.018 (0.46)  
.080 (2.03)  
.065 (1.65)  
.210 (5.33)  
.190 (4.83)  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
RATINGS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL RBU1001M RBU1002M RBU1003M RBU1004M RBU1005M RBU1006M RBU1007M UNITS  
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
RRM  
RMS  
Maximum DC Blocking Voltage  
V
100  
1000  
DC  
O
Maximum Average Forward Rectified Current  
I
Amps  
Amps  
at T = *100oC (Note 4)  
10.0  
200  
C
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
FSM  
R
2.3  
26  
θ JC  
θ JA  
Typical Thermal Resistance (Note 1)  
0C/W  
0 C  
R
Operating and Storage Temperature Range  
T , T  
J STG  
-55 to + 150  
O
ELECTRICAL CHARACTERISTICS(@T =25 C unless otherwise noted)  
A
CHARACTERISTICS  
SYMBOL  
RBU1001M  
RBU1005M RBU1006M RBU1007M  
RBU1002M RBU1003M RBU1004M  
1.1  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 5.0A DC  
V
F
@T = 25oC  
A
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
2.0  
I
R
µAmps  
@T = 100oC  
A
100  
NOTES : 1. Thermal Resistance : Heat-sink case mounted or if PCB mounted.  
2. "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
3. Equivalent to Vishay's GBU10 Series.  
2006-12  
4. "*" Heat Sink Temperature.  
123

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