5秒后页面跳转
RBO40-40G-TR PDF预览

RBO40-40G-TR

更新时间: 2024-01-11 22:24:08
品牌 Logo 应用领域
其他 - ETC 电池PC
页数 文件大小 规格书
10页 270K
描述
REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT (RBO)

RBO40-40G-TR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:not_compliant
HTS代码:8541.30.00.80风险等级:5.77
其他特性:HIGH RELIABILITY最大钳位电压:40 V
配置:SINGLE WITH BUILT-IN DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

RBO40-40G-TR 数据手册

 浏览型号RBO40-40G-TR的Datasheet PDF文件第1页浏览型号RBO40-40G-TR的Datasheet PDF文件第2页浏览型号RBO40-40G-TR的Datasheet PDF文件第4页浏览型号RBO40-40G-TR的Datasheet PDF文件第5页浏览型号RBO40-40G-TR的Datasheet PDF文件第6页浏览型号RBO40-40G-TR的Datasheet PDF文件第7页 
RBO40-40G / RBO40-40T  
Symbol  
RM31/VRM32 Stand-off voltage Transil T1 / Transil T2.  
VBR31/VBR32 Breakdown voltage Transil T1 / Transil T2.  
IR31/IR32  
Leakage current Transil T1 / Transil T2.  
VCL31/VCL32 Clamping voltage Transil T1 / Transil T2.  
Parameter  
V
VF13  
IPP  
Forward voltage drop Diode D1.  
Peak pulse current.  
αT  
Temperature coefficient of VBR.  
C31/C32  
C13  
Capacitance Transil T1 / Transil T2.  
Capacitance of Diode D1  
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C < Tamb < + 85°C)  
Value  
Unit  
Symbol  
Test Conditions  
Min.  
Typ. Max.  
VF 13  
VF 13  
VF 13  
VF 13  
C13  
IF = 40 A  
1.9  
1.45  
V
V
IF = 20A  
IF = 1 A  
1
V
IF = 100 mA  
F = 1MHz VR= 0 V  
0.95  
V
3000  
pF  
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C < Tamb < + 85°C)  
Value  
Symbol  
Test Conditions  
Unit  
Min.  
22  
Typ. Max.  
VBR 31  
VBR 31  
IRM 31  
IRM 31  
VCL 31  
α T  
IR = 1 mA  
35  
V
V
IR = 1 mA, Tamb = 25°C  
VRM = 20 V  
24  
32  
100  
µA  
VRM = 20 V, Tamb = 25°C  
IPP = 37.5A, Tj initial = 25°C  
Temperature coefficient of VBR  
10  
µA  
10/1000µs  
40  
V
9
10-4/°C  
C 31  
F = 1MHz  
VR = 0 V  
3000  
pF  
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C < Tamb < + 85°C)  
Value  
Symbol  
Test Conditions  
Unit  
Min.  
22  
Typ. Max.  
VBR 32  
VBR 32  
IRM 32  
IRM 32  
VCL 32  
α T  
IR = 1 mA  
35  
V
V
IR = 1 mA, Tamb = 25°C  
VRM = 20 V  
24  
32  
100  
µA  
VRM = 20 V, Tamb = 25°C  
IPP = 20 A (note 1)  
10  
µA  
40  
V
Temperature coefficient of VBR  
9
10-4/°C  
C32  
F = 1MHz  
VR = 0 V  
8000  
pF  
Note 1 : One pulse, see pulse definition in load dump test generator circuit.  
3/10  

与RBO40-40G-TR相关器件

型号 品牌 描述 获取价格 数据表
RBO40-40M STMICROELECTRONICS REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

获取价格

RBO40-40M-TR STMICROELECTRONICS SILICON SURGE PROTECTOR, POWER, SOP-10

获取价格

RBO40-40T STMICROELECTRONICS REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO

获取价格

RBOX100 AXIOMTEK Fanless and cableless design

获取价格

RBOX101-4COM AXIOMTEK Fanless and cableless design

获取价格

RBOX101-6COM AXIOMTEK Fanless and cableless design

获取价格