Datasheet > RB548W_1

RB548W_1

更新时间： 2024-11-26 06:07:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	165K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB548W_1 数据手册

RB548W

Diodesꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Schottky barrier diode

RB548W

zApplication! ! ! ! ! ! ! ! ! !

zExternal dimensions (Unit : mm)

zLand size figure (Unit : mm)

Low current rectification

㪈㪅㪇

㪇㪅㪌

ꢄꢅꢆrꢇꢅꢈ

㪇㪅㪊㫧㪇㪅㪈

䇭䇭䇭㩷㪇㪅㪇㪌

ꢇꢅꢄꢊrꢇꢅꢇꢊ

ꢁꢂꢃ

㪇㪅㪎

zFeatures

1) Ultra small mold type. (EMD3)

ꢇ㨪ꢇꢅꢄ

2) Low I

㪇㪅㪍

㪜㪤㪛㪊

㪇㪅㪍

ꢁꢄꢃ

3) High reliability.

ꢁꢈꢃ

㪇㪅㪉㫧㪇㪅㪈

䇭䇭㪄㪇㪅㪇㪌

ꢇꢅꢊꢊrꢇꢅꢄ

ꢇꢅꢋrꢇꢅꢄ

ꢇꢅꢊ

ꢄꢅꢇrꢇꢅꢄ

ꢇꢅꢊ

㩷

zConstruction

Silicon epitaxial planear

zStructure

㪩㪦㪟㪤㩷㪑㩷㪜㪤㪛㪊

㪡㪜㪛㪜㪚㩷㪑㩷㪪㪦㪫㪄㪋㪈㪍

㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪌㪘

㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺㫋㫆㫉㫐㪀

zTaping dimensions (Unit : mm)

㱢㪈㪅㪌㪌㫧㪇㪅㪈

䇭䇭䇭䇭䇭㩷㩷㪇

㪉㪅㪇㫧㪇㪅㪇㪌

㪇㪅㪊㫧㪇㪅㪈

㪋㪅㪇㫧㪇㪅㪈

㪈㪅㪏㫧㪇㪅㪈

㱢㪇㪅㪌㫧㪇㪅㪈

㪇㪅㪐㫧㪇㪅㪉

zAbsolute maximum ratings̈́Ta=25qCͅ

Parameter

Limits

Symbol

V_R

Unit

Reverse voltage (DC)

Average rectified forward currenẗ́*1ͅ

Forward current surge peak 䋨60Hz䊶1cyc䋩䋨*1䋩

Junction temperature

100

500

125

I_FSM

㷄

Storage temperature

-40 to +125

Tstg

㷄

(*1) Rating of per diode

zElectrical characteristics̈́Ta=25qCͅ

Parameter

Forward voltage

Reverse current

Conditions

I_F=10mA

V_R=10V

Symbol

Min.

Typ.

Max.

0.45

0.5

Unit

V_F

I_R

μA

Rev.B

1/3

12 3 4

中文翻译

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