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RB500V-40_1 PDF预览

RB500V-40_1

更新时间: 2024-11-17 02:50:43
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
4页 139K
描述
Shottky barrier diode

RB500V-40_1 数据手册

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RB500V-40  
Diodes  
Shottky barrier diode  
RB500V-40  
zApplication  
zExternal dimensions (Unit : mm)  
zLead size figure (Unit : mm)  
Low current rectification  
1.25±0.1  
0.1±0.1  
ꢀꢀꢀ 0.05  
0.9MIN.  
zFeatures  
1) Ultra Small mold type. (UMD2)  
2) Low I  
R
3) High reliability.  
UMD2  
zConstruction  
zStructure  
Silicon epitaxial planar  
0.7±0.2  
ꢀꢀꢀ 0.1  
0.3±0.05  
ROHM : UMD2  
JEDEC : S0D-323  
JEITA : SC-90/A  
dot (year week factory)  
zTaping dimensions (Unit : mm)  
φ1.55±0.05  
0.3±0.1  
2.0±0.05  
4.0±0.1  
4.0±0.1  
φ1.05  
1.40±0.1  
1.0±0.1  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
Limits  
Symbol  
VRM  
VR  
Unit  
V
V
45  
40  
Average rectified forward current  
Forward current surge peak 60Hz1cyc)  
Junction temperature  
100  
1
125  
Io  
IFSM  
Tj  
mA  
A
Storage temperature  
-40 to +125  
Tstg  
zElectrical characteristics (Ta=25°C)  
Parameter  
Forward voltage  
Conditions  
IF=10mA  
Symbol  
Min.  
Typ.  
Max.  
0.45  
1
Unit  
V
VF  
IR  
-
-
-
-
-
Reverse current  
VR=10V  
µA  
pF  
Capacitance between terminals  
VR=10V , f=1MHz  
Ct  
6.0  
-
Rev.A  
1/3  

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