Datasheet > RB155G

RB155G

更新时间： 2024-11-02 03:37:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
2页	79K
描述
SILICON BRIDGE RECTIFIERS

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中文翻译

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数据手册

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RB155G 数据手册

GALAXY ELECTRICAL

RB151(G)---RB157(G)

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 1.5 A

SILICON BRIDGE RECTIFIERS

FEATURES

Rating to 1000V PRV

WOM

Surge overload rating to 50 Amperes peak

Ideal for printed circuit board

.150(3.8)

.130(3.3)

.360(9.1)

.340(8.6)

RB15

.305(7.75)

.265(6.73)

.395(10.0)

.355(9.0)

.220(6.73)

.180(4.6)

.340(8.6)

.300(7.6)

WOM

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Mounting Position: Any

MIN

1.27(32.3)

1.20(30.5)

Glass passivated chip junctions

.032(.81)

.028(.71)

DIA

.220

POS.

LEAD

.180

.220

.180

(5.6)

(4.6)

(5.6)

(4.6)

inch(mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

RB151 RB152 RB153 RB154 RB155 RB156 RB157 UNITS

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forw ard

100

1000

1.5

I_F(AV)

Output current

@T_A=55

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

I_FSM

50.0

1.0

Maximum instantaneous forw ard voltage

@ 1.5 A

V_F

I_R

Maximum reverse current

@T_A=25

10.0

at rated DC blocking voltage @T_A=100

Operating junction temperature range

Storage temperature range

0.5

- 55 ---- + 125

T_J

T_STG

- 55 ---- + 150

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 0287012

中文翻译

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