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RA55H3340M

更新时间: 2024-11-18 03:38:15
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器
页数 文件大小 规格书
9页 88K
描述
330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

RA55H3340M 数据手册

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MITSUBISHI RF MOSFET MODULE  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RA55H3340M  
330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO  
DESCRIPTION  
The RA55H3340M is a 55-watt RF MOSFET Amplifier  
BLOCK DIAGRAM  
Module for 12.5-volt mobile radios that operate in the 330- to  
400-MHz range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the RF input signal attenuates up to 60 dB. The  
output power and drain current increase as the gate voltage  
increases. With a gate voltage around 4V (minimum), output  
power and drain current increases substantially. The nominal  
output power becomes available at 4.5V (typical) and 5V  
(maximum). At VGG=5V, the typical gate current is 1 mA.  
This module is designed for non-linear FM modulation, but  
may also be used for linear modulation by setting the drain  
quiescent current with the gate voltage and controlling the  
output power with the input power.  
1
4
5
1
2
3
4
5
RF Input (Pin)  
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout  
)
FEATURES  
RF Ground (Case)  
• Enhancement-Mode MOSFET Transistors  
(IDD0 @ VDD=12.5V, VGG=0V)  
PACKAGE CODE: H2S  
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Broadband Frequency Range: 330-400MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=5V  
• Module Size: 66 x 21 x 9.88 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltage and controlling the output power  
with the input power  
ORDERING INFORMATION:  
ORDER NUMBER  
RA55H3340M-101  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
RA55H3340M  
18 July 2007  
MITSUBISHI ELECTRIC  
1/9  

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