Datasheet > RA55H4047M_10

RA55H4047M_10

更新时间： 2024-11-21 09:38:43

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
9页	98K
描述
400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RA55H4047M_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA55H4047M

RoHS COMPLIANCE , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

BLOCK DIAGRAM

DESCRIPTION

The RA55H4047M is a 55-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 400- to

470-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The

output power and drain current increase as the gate voltage

increases. With a gate voltage around 4V (minimum), output

power and drain current increases substantially. The nominal

output power becomes available at 4.5V (typical) and 5V

(maximum). At V_GG=5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but

may also be used for linear modulation by setting the drain

quiescent current with the gate voltage and controlling the

output power with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>55W, η_T>35% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 400-470MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

RoHS COMPLIANCE

• RA55H4047M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

However, it is applicable to the following exceptions of RoHS

Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA55H4047M-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA55H4047M

25 Jun 2010

1/9

12 3 4 5 6 7...9

中文翻译

下载PDF

与RA55H4047M_10相关器件

型号	品牌	获取价格	描述	数据表
RA55H4047M_11	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA55H4047M-101	MITSUBISHI	获取价格	RF MOSFET MODULE 400-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA55H4452M	MITSUBISHI	获取价格	RF MOSFET MODULE 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA55H4452M_11	MITSUBISHI	获取价格	RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA55H4452M-101	MITSUBISHI	获取价格	RF MOSFET MODULE 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
RA58HQW	ETC	获取价格
RA58HQY	ETC	获取价格
RA58-M/1212ES.41KBPG	ETC	获取价格	DREHGEBER ABSOLUT 4096 10/30V MEHRGAENG
RA58-P/1212EK.42THSP	ETC	获取价格	DREHGEBER ABSOLUT MEHRGAENGIG PROGRAMM
RA58-S/0010AS.41KBPG	ETC	获取价格	DREHGEBER ABSOLUT 1024 SCHRITTE 5V

与RA55H4047M_10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

RA55H4047M_10

RA55H4047M_10 数据手册

与RA55H4047M_10相关器件

与RA55H4047M_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RA55H4047M_10

RA55H4047M_10 数据手册

与RA55H4047M_10相关器件

与RA55H4047M_10相关文章

您还可以找

您在本页遇到什么问题？