Datasheet > RA30H0608M_10

RA30H0608M_10

更新时间： 2024-11-25 09:38:47

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器
页数	文件大小	规格书
9页	92K
描述
66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RA30H0608M_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA30H0608M

RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA30H0608M is a 30-watt RF MOSFET Amplifier

Module for 12.5-volt mobile radios that operate in the 66- to

88-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 3V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 4V (typical) and 5V (maximum). At V_GG=5V,

the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD≅0 @ V_DD=12.5V, V_GG=0V)

PACKAGE CODE: H2S

• P_out>30W, η_T>40% @ V_DD=12.5V, V_GG=5V, P_in=50mW

• Broadband Frequency Range: 66-88MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=5V

• Module Size: 66 x 21 x 9.88 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power

RoHS COMPLIANCE

• RA30H0608M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA30H0608M-101

SUPPLY FORM

Antistatic tray,

10 modules/tray

RA30H0608M

24 Jun 2010

1/9

12 3 4 5 6 7...9

中文翻译

下载PDF

与RA30H0608M_10相关器件

型号	品牌	获取价格	描述	数据表
RA30H0608M_11	MITSUBISHI	获取价格	RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
RA30H0608M-01	MITSUBISHI	获取价格	68-88MHz 30W 12.5V MOBILE RADIO
RA30H0608M-101	MITSUBISHI	获取价格	RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
RA30H0608M1-501	MITSUBISHI	获取价格	Narrow Band High Power Amplifier,
RA30H0608M-E01	MITSUBISHI	获取价格	68-88MHz 30W 12.5V MOBILE RADIO
RA30H1317M	MITSUBISHI	获取价格	135-175MHz 30W 12.5V MOBILE RADIO
RA30H1317M_06	MITSUBISHI	获取价格	RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RA30H1317M_10	MITSUBISHI	获取价格	135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RA30H1317M_11	MITSUBISHI	获取价格	RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RA30H1317M-01	MITSUBISHI	获取价格	135-175MHz 30W 12.5V MOBILE RADIO

与RA30H0608M_10相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

39
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

31
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

59
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

55

产品中心

服务支持

精选活动

关于我们

帮助中心

RA30H0608M_10

RA30H0608M_10 数据手册

与RA30H0608M_10相关器件

与RA30H0608M_10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RA30H0608M_10

RA30H0608M_10 数据手册

与RA30H0608M_10相关器件

与RA30H0608M_10相关文章

您还可以找

您在本页遇到什么问题？