Datasheet > RA08H1317M_10

RA08H1317M_10

更新时间： 2022-11-17 11:52:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器便携式无线
页数	文件大小	规格书
9页	149K
描述
135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO

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数据手册

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RA08H1317M_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANCE

RA08H1317M

TYPICAL PERFORMANCE (T_case=+25°C, Z _G=Z_L=50Ω, unless otherwise specified)

OUTPUT POWER, TOTAL EFFICIENCY,

and INPUT VSWR versus FREQUENCY

2^nd, 3^rdHARMONICS versus FREQUENCY

140

120

100

-20

-30

-40

-50

-60

-70

V_DD=12.5V

V_GG=3.5V

P_in=20mW

_out@V_GG=3.5V

2^nd@P_out=8W

_T@P_out=8W

V_DD=12.5V

P_in=20mW

3^rd

@P_out=8W

_in@P_out=8W

120 130 140 150 160 170 180 190

FREQUENCY f(MHz)

120 130 140 150 160 170 180 190

FREQUENCY f(MHz)

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

P_out

f=135MHz,

V_DD=12.5V,

V_GG=3.5V

I_DD

f=155MHz,

V_DD=12.5V,

V_GG=3.5V

-15 -10 -5

10 15 20

-15 -10 -5

10 15 20

INPUT POWER P_in(dBm)

OUTPUT POWER, POWER GAIN and

DRAIN CURRENT versus INPUT POWER

P_out

I_DD

f=175MHz,

V_DD=12.5V,

V_GG=3.5V

-15 -10 -5

10 15 20

INPUT POWER P_in(dBm)

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

OUTPUT POWER and DRAIN CURRENT

versus DRAIN VOLTAGE

f=155MHz,

V_GG=3.5V,

P_in=20mW

f=135MHz,

V_GG=3.5V,

P_in=20mW

P_out

I_DD

DRAIN VOLTAGE V_DD(V)

RA08H1317M

30 Jun 2010

3/9

1 234 5 6 7...9

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