Datasheet > RA08H1317M_10

RA08H1317M_10

更新时间： 2022-11-17 11:52:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器便携式无线
页数	文件大小	规格书
9页	149K
描述
135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO

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数据手册

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RA08H1317M_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RoHS COMPLIANCE

RA08H1317M

MAXIMUM RATINGS (T_case=+25°C, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

V_DD

V_GG

P_in

Drain Voltage

Gate Voltage

Input Power

V_GG=0V, P_in=0W

V_GG<3.5V

13.2

V_DD<12.5V, P_in<20mW

°C

f=135-175MHz,

Z_G=Z_L=50Ω

P_out

Output Power

T_case(OP)Operation Case Temperature Range

T_stgStorage Temperature Range

The above parameters are independently guaranteed.

-30 to +90

-40 to +110

°C

ELECTRICAL CHARACTERISTICS (T_case=+25°C, Z _G=Z_L=50Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN TYP MAX UNIT

Frequency Range

Output Power

Total Efficiency

2^ndHarmonic

Input VSWR

135

175

MHz

P_out

η_T

V_DD=12.5V,V_GG=3.5V, P_in=20mW

P_out=8W (V_GGcontrol),

V_DD=12.5V,

2f_o

ρ_in

-25

4.4:1

dBc

—

P_in=20mW

I_GG

Gate Current

V_DD=5-13.2V, P_in=10-30mW, P_out<9W (V_GGcontrol),

Load VSWR=4:1

—

Stability

No parasitic oscillation

—

V_DD=13.2V, P_in=20mW, P_out=8W (V_GGcontrol),

Load VSWR=20:1

Load VSWR Tolerance

No degradation or destroy

All parameters, conditions, ratings, and limits are subject to change without notice.

RA08H1317M

30 Jun 2010

2/9

123 4 5 6 7...9

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