5秒后页面跳转
RA07M1317M_10 PDF预览

RA07M1317M_10

更新时间: 2024-11-21 09:39:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 放大器便携式无线
页数 文件大小 规格书
9页 103K
描述
135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO

RA07M1317M_10 数据手册

 浏览型号RA07M1317M_10的Datasheet PDF文件第2页浏览型号RA07M1317M_10的Datasheet PDF文件第3页浏览型号RA07M1317M_10的Datasheet PDF文件第4页浏览型号RA07M1317M_10的Datasheet PDF文件第5页浏览型号RA07M1317M_10的Datasheet PDF文件第6页浏览型号RA07M1317M_10的Datasheet PDF文件第7页 
Silicon RF Power Semiconductors  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RA07M1317M  
RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier  
2
3
Module for 7.2-volt portable radios that operate in the 135- to  
175-MHz range.  
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the RF input signal attenuates up to 60 dB. The output  
power and drain current increase as the gate voltage increases.  
With a gate voltage around 2.5V (minimum), output power and  
drain current increases substantially. The nominal output power  
becomes available at 3V (typical) and 3.5V (maximum). At  
VGG=3.5V, the typical gate current is 1 mA.  
1
4
5
This module is designed for non-linear FM modulation, but  
may also be used for linear modulation by setting the drain  
quiescent current with the gate voltage and controlling the output  
power with the input power.  
1
RF Input (Pin)  
2
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
RF Output (Pout  
)
RF Ground (Case)  
FEATURES  
• Enhancement-Mode MOSFET Transistors  
(IDD0 @ VDD=7.2V, VGG=0V)  
PACKAGE CODE: H46S  
• Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW  
ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW  
• Broadband Frequency Range: 135-175MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V  
• Module Size: 30 x 10 x 5.4 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltage and controlling the output power  
with the input power  
RoHS COMPLIANCE  
• RA07M1317M-101 is a RoHS compliant products.  
• RoHS compliance is indicate by the letter “G” after the Lot Marking.  
• This product include the lead in the Glass of electronic parts and the  
lead in electronic Ceramic parts.  
How ever,it applicable to the following exceptions of RoHS Directions.  
1.Lead in the Glass of a cathode-ray tube, electronic parts, and  
fluorescent tubes.  
2.Lead in electronic Ceramic parts.  
ORDERING INFORMATION:  
ORDER NUMBER  
RA07M1317M-101  
SUPPLY FORM  
Antistatic tray,  
50 modules/tray  
RA07M1317M  
30 Jun 2010  
1/9  

与RA07M1317M_10相关器件

型号 品牌 获取价格 描述 数据表
RA07M1317M-01 MITSUBISHI

获取价格

135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317M-101 MITSUBISHI

获取价格

RoHS Compliance , 135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317M-E01 MITSUBISHI

获取价格

135-175MHz 6.5W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317MSA MITSUBISHI

获取价格

135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317MSA_10 MITSUBISHI

获取价格

135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317MSA-101 MITSUBISHI

获取价格

135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M2127M MITSUBISHI

获取价格

MITSUBISHI RF MOSFET MODULE
RA07M2127M_06 MITSUBISHI

获取价格

RoHS Compliance ,215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M2127M_10 MITSUBISHI

获取价格

215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M2127M-01 MITSUBISHI

获取价格

MITSUBISHI RF MOSFET MODULE