Datasheet > RA07M3340M

RA07M3340M

更新时间： 2024-11-20 22:24:27

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	70K
描述
MITSUBISHI RF MOSFET MODULE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RA07M3340M 技术参数

生命周期：	Obsolete	包装说明：	FLNG,1.0"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.8

RA07M3340M 数据手册

MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA07M3340M

330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA07M3340M is a 7-watt RF MOSFET Amplifier Module

for 7.2-volt portable radios that operate in the 330- to 400-MHz

range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the drain

and the RF input signal attenuates up to 60 dB. The output power

and drain current increase as the gate voltage increases. With a

gate voltage around 2.5V (minimum), output power and drain

current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

V_GG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out)

FEATURES

• Enhancement-Mode MOSFET Transistors

RF Ground (Case)

(I_DD@0 @ V_DD=7.2V, V_GG=0V)

PACKAGE CODE: H46S

• P_out>7W @ V_DD=7.2V, V_GG=3.5V, P_in=50mW

• h_T>40% @ P_out=6.5W (V_GGcontrol), V_DD=7.2V, P_in=50mW

• Broadband Frequency Range: 330-400MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain current

with the gate voltage and controlling the output power with the

input power

ORDERING INFORMATION:

ORDER NUMBER

RA07M3340M-E01

SUPPLY FORM

Antistatic tray,

25 modules/tray

RA07M3340M-01

(Japan - packed without desiccator)

RA 07M3340M

25 April 2003

MITSUBISHI ELECTRIC

1/9

12 3 4 5 6 7...9

中文翻译

下载PDF

与RA07M3340M相关器件

型号	品牌	获取价格	描述	数据表
RA07M3340M_06	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M3340M_10	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M3340M-01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA07M3340M-101	MITSUBISHI	获取价格	RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M3340M-E01	MITSUBISHI	获取价格	MITSUBISHI RF MOSFET MODULE
RA07M3843M	MITSUBISHI	获取价格	RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M3843M_10	MITSUBISHI	获取价格	RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M3843M-101	MITSUBISHI	获取价格	RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO
RA07M4047M	MITSUBISHI	获取价格	400-470MHz 7W 7.2V PORTABLE RADIO
RA07M4047M_06	MITSUBISHI	获取价格	RoHS Compliance , 400-470MHz 7W 7.2V, 2 Stage Amp. For PORTABLE RADIO

与RA07M3340M相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

RA07M3340M

RA07M3340M 技术参数

RA07M3340M 数据手册

与RA07M3340M相关器件

与RA07M3340M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RA07M3340M

RA07M3340M 技术参数

RA07M3340M 数据手册

与RA07M3340M相关器件

与RA07M3340M相关文章

您还可以找

您在本页遇到什么问题？