Datasheet > RA03M8087M_10

RA03M8087M_10

更新时间： 2024-11-06 09:39:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器便携式无线
页数	文件大小	规格书
9页	144K
描述
806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO

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RA03M8087M_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA03M8087M

RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO

DESCRIPTION

BLOCK DIAGRAM

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier

Module for 7.2-volt portable radios that operate in the 806 to

870-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V_GG=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 2.5V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

V_GG=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

RF Input (P_in)

Gate Voltage (V_GG), Power Control

Drain Voltage (V_DD), Battery

RF Output (P_out

)

FEATURES

RF Ground (Case)

• Enhancement-Mode MOSFET Transistors

(I_DD0 @ V_DD=7.2V, V_GG=0V)

PACKAGE CODE: H46S

• P_out>3.6W @ V_DD=7.2V, V_GG=3.5V, P_in=50mW

• η_T>32% @ P_out=3W (V_GGcontrol), V_DD=7.2V, P_in=50mW

• Broadband Frequency Range: 806-870MHz

• Low-Power Control Current I_GG=1mA (typ) at V_GG=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power.

RoHS COMPLIANT

• RA03M8087M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever, it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA03M8087M-101

SUPPLY FORM

Antistatic tray,

50 modules/tray

RA03M8087M

28 Jun 2010

1/9

12 3 4 5 6 7...9

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与RA03M8087M_10相关器件

型号	品牌	获取价格	描述	数据表
RA03M8087M-01	MITSUBISHI	获取价格	Narrow Band High Power Amplifier, 806MHz Min, 870MHz Max, 30 X 10 MM, 5.40 MM HEIGHT, MODU
RA03M8087M-101	MITSUBISHI	获取价格	RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA03M8894M	MITSUBISHI	获取价格	889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA03M8894M_10	MITSUBISHI	获取价格	889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA03M8894M-101	MITSUBISHI	获取价格	889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
RA03M9595M	MITSUBISHI	获取价格	952-954MHz 3.0W 8.0V, 2 Stage Amp.
RA03M9595M-101	MITSUBISHI	获取价格	952-954MHz 3.0W 8.0V, 2 Stage Amp.
RA-03-R	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA-03-R-T	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH
RA-04	DBLECTRO	获取价格	RIGHT ANGLE TYPE DIP SWITCH

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