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R7154_15 PDF预览

R7154_15

更新时间: 2024-11-08 01:26:15
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 213K
描述
PHOTOMULTIPLIER TUBE

R7154_15 数据手册

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PHOTOMULTIPLIER TUBE  
R7154  
High Sensitivity Solar Blind Photocathode (160 nm to 320 nm)  
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type  
FEATURES  
GSpectral Response .................................. 160 nm to 320 nm  
GCathode Sensitivity  
Radiant at 254 nm ..................................... 62 mA/W Typ.  
Quantum Efficiency at 254 nm ........................ 30 % Typ.  
GAnode Sensitivity (at 1000 V)  
Radiant at 254 nm ............................ 6.2 × 105 A/W Typ.  
APPLICATIONS  
GEmission Spectroscopy  
GUV Spectrophotometers  
SPECIFICATIONS  
Figure 1: Typical Spectral Response  
GENERAL  
TPMSB0128EA  
Parameter  
Spectral Response*  
Wavelength of Maximum Response  
Description/Value  
Unit  
nm  
nm  
mm  
100  
160 to 320  
230  
Cs-Te  
8 × 24  
Quartz  
CATHODE RADIANT  
SENSITIVITY  
MateriaI  
Minimum Effective Area  
Photocathode  
10  
Window Material  
Secondary Emitting Surface  
Sb-Cs  
Dynode  
Structure  
Circular-cage  
Number of Stages  
9
Direct Interelectrode Anode to Last Dynode  
4
6
pF  
pF  
1
Capacitances  
Base  
Anode to All Other Electrodes  
11-pin base JEDEC No. B11-88  
Approx. 45  
QUANTUM  
Weight  
g
EFFICIENCY  
Operating Ambient Temperature  
Storage Temperature  
SuitabIe Socket  
-30 to +50  
-30 to +50  
E678–11A (Sold Separately)  
E717–63 (Sold Separately)  
E717–74 (Sold Separately)  
°C  
°C  
0.1  
SuitabIe Socket Assembly  
0.01  
* Operate in a nitrogen-purged environment for VUV detection.  
100  
200  
300  
400  
500  
WAVELENGTH (nm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.  

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