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R7110U-07 PDF预览

R7110U-07

更新时间: 2024-11-13 03:38:23
品牌 Logo 应用领域
HAMAMATSU 光电光电器件
页数 文件大小 规格书
2页 23K
描述
COMPACT HYBRID PHOTO-DETECTOR

R7110U-07 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.67
Is Samacsys:N配置:COMPLEX
最大暗电源:50 nA红外线范围:NO
JESD-609代码:e0安装特点:THROUGH HOLE MOUNT
功能数量:1最高工作温度:50 °C
最低工作温度:-40 °C最小反向击穿电压:155 V
形状:ROUND尺寸:8 mm
子类别:Photo ICs表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

R7110U-07 数据手册

 浏览型号R7110U-07的Datasheet PDF文件第2页 
COMPACT HYBRID  
PHOTO-DETECTOR  
with Si-Avalanche Diode Target  
PRELIMINARY DATA  
SEPT. 2000  
R7110U-07  
FEATURES  
APPLICATIONS  
Low excess noise  
High gain  
High energy physics  
Medical  
Operable in high magnetic fields  
Low hysteresis  
Other high precision measurements  
GENERAL  
Parameter  
Description/Value  
160 to 850  
Unit  
nm  
Spectral Response  
nm  
Wavelength of Maximum Response  
420  
mm dia.  
Multialkali  
Material  
Minimum Effective Area a  
Photocathode  
8
Window Material  
Target  
Synthetic Silica  
3 mm Single-element Electron  
Bombarded Si-Avalanche Diode  
E678-12M (Supplied)  
Suitable Socket  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
-8500  
Unit  
Vdc  
V
Supply Voltage  
155 b  
Avalanche Diode Reverse Bias Voltage  
Ambient Temperature  
-40 to +50  
°C  
CHARACTERISTICS (at 25 °C)  
Parameter  
Luminous (2856K)  
Radiant at 420 nm  
Min.  
100  
Typ.  
130  
51  
4 × 104  
1.3  
Max.  
Unit  
µA/lm  
mA/W  
Cathode Sensitivity  
Gain c  
ns  
Rise Time  
Time Response c  
15  
ns  
Fall Time  
5
120  
50  
ns  
nA  
pF  
Width  
Leakage Current d  
Diode (Target)  
Capacitance d  
NOTE: aWithout magnetic fields  
bat 25 °C  
cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V  
dAvalanche Diode Reverse Bias Voltage: approx.145 V  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
2000 Hamamatsu Photonics K.K.  
©

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