Datasheet > R500CH22C2G4

R500CH22C2G4

更新时间： 2024-11-07 09:36:31

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
13页	357K
描述
Silicon Controlled Rectifier, 4980 A, 2200 V, SCR, 101A281, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

R500CH22C2G4 数据手册

Date:- 11 Jan, 2000

Data Sheet Issue:- 1

WESTCODE

Distributed Gate Thyristor

Types R500CH20 to R500CH28

Absolute Maximum Ratings

MAXIMUM

LIMITS

2000-2800

2100-2900

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

2475

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, 25°C, (note 2)

D.C. on-state current, 25°C, (note 4)

A²s

A/µs

°C

1645

950

4980

4100

31.0

34.1

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

≤

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

4.81×10⁶

5.81×10⁶

1000

1500

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

Storage temperature range

di_T/dt

V_RGM

P_G(AV)

P_GM

V_GD

T_HS

T_stg

0.25

-40 to +125

-40 to +150

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Provisional Data Sheet. Types R500CH20 to R500CH28 Issue 1

Page 1 of 13

January, 2000

12 3 4 5 6 7...13

中文翻译

下载PDF

与R500CH22C2G4相关器件

型号	品牌	获取价格	描述	数据表
R500CH22C2G6	IXYS	获取价格	Silicon Controlled Rectifier, 4980 A, 2200 V, SCR, 101A281, 3 PIN
R500CH22C2G7	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 1540V V(RRM), 1 Element, 101A28
R500CH22C2G9	IXYS	获取价格	Silicon Controlled Rectifier, 4980 A, 2200 V, SCR, 101A281, 3 PIN
R500CH22C2H1	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 220V V(RRM), 1 Element, 101A281
R500CH22C2H3	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 660V V(RRM), 1 Element, 101A281
R500CH22C2H4	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 880V V(RRM), 1 Element, 101A281
R500CH22C2H5	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 1100V V(RRM), 1 Element, 101A28
R500CH22C2H6	IXYS	获取价格	Silicon Controlled Rectifier, 4980 A, 2200 V, SCR, 101A281, 3 PIN
R500CH22C2H9	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 1980V V(RRM), 1 Element, 101A28
R500CH22CD1	IXYS	获取价格	Silicon Controlled Rectifier, 4980A I(T)RMS, 2200V V(DRM), 220V V(RRM), 1 Element, 101A281

与R500CH22C2G4相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

R500CH22C2G4

R500CH22C2G4 数据手册

与R500CH22C2G4相关器件

与R500CH22C2G4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

R500CH22C2G4

R500CH22C2G4 数据手册

与R500CH22C2G4相关器件

与R500CH22C2G4相关文章

您还可以找

您在本页遇到什么问题？