5秒后页面跳转
R4330-02 PDF预览

R4330-02

更新时间: 2024-11-04 22:24:43
品牌 Logo 应用领域
HAMAMATSU /
页数 文件大小 规格书
4页 89K
描述
PHOTOMULTlPLlER TUBES

R4330-02 数据手册

 浏览型号R4330-02的Datasheet PDF文件第2页浏览型号R4330-02的Datasheet PDF文件第3页浏览型号R4330-02的Datasheet PDF文件第4页 
PHOTOMULTlPLlER TUBES  
R3310-02, R4330-02  
InGaAs (Cs) Photocathode, Wide Spectral Response, 51mm (2") Dia., Head-on Type  
For Photon Counting : Low Dark Counts, Excellent P.H.D.  
APPLICATIONS  
Raman Spectroscopy  
Fluorescent Spectroscopy  
Astrophysical Measurement  
Laser Detection  
FEATURES  
Wide Spectral Response  
R3310-02 ........................................... 300 to 1040nm  
R4330-02 ............................................160 to 1040nm  
High Quantum Efficiency in IR ...........  
Fast Rise Time ......................................  
Excellent Single Photoelectron  
Pulse Height Distribution  
0.25% at 1 m  
3.0ns at 1500V  
........................... Peak to Valley Ratio 2.3 (at –20  
Low Dark Counts ....................... 30cps Typ. (at –20  
)
)
Hamamatsu R3310-02 and R4330-02 are 51mm (2") diameter head-on type photomultiplier tubes having InGaAs (Cs) photocath-  
odes, and linear focused CuBeO dynodes. The InGaAs (Cs) photocathode allows high sensitivity over a wide spectral range up to  
1040nm.  
The R3310-02 and the R4330-02 are selected for photon counting, and they feature low dark counts and excellent pulse height  
distribution (PHD) of single photoelectrons.  
Figure 1: Typical Spectral Response  
GENERAL  
TPMHB0051EA  
Parameter  
Description/Value Unit  
102  
101  
100  
Spectral Response  
R4330-02  
R3310-02  
CATHODE  
RADIANT  
SENSITIVITY  
R3310-02  
R4330-02  
300 to 1040  
160 to 1040  
nm  
nm  
Wavelength of Maximum Response  
400  
nm  
Photocathode  
MateriaI  
InGaAs(Cs)  
R4330-02  
R3310-02  
Minimum Effective Area  
Mode  
10 10  
Opaque  
mm  
Window Material  
R3310-02  
Borosilicate glass (K-free)  
Synthetic silica glass  
R4330-02  
QUANTUM  
EFFICIENCY  
Dynode  
Cu-BeO  
Linear Focused  
10  
Secondary Emitting Surface  
Structure  
Number of Stages  
10–1  
Direct Interelectrode Capacitances  
Anode to Last Dynode  
Approx. 2  
Approx. 3  
pF  
pF  
Anode to All Other Electrodes  
21-pin Base  
Base  
10–2  
100  
E678–21C (Supplied)  
E678–21D (Option)  
SuitabIe Socket  
700  
1100  
300  
500  
900  
g
g
R3310-02  
110  
93  
WAVELENGTH (nm)  
Weight  
R4330-02  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
lnformation furnished by HAMAMATSU is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are  
subject to change without notice. No patent right are granted to any of the circuits described herein.  
1997 Hamamatsu Photonics K.K.  
©

与R4330-02相关器件

型号 品牌 获取价格 描述 数据表
R43305 ETC

获取价格

433.920 MHz ASK RADIO DATA RECEIVER
R4330A ETC

获取价格

Optoelectronic
R4330E3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 300V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
R4330F MICROSEMI

获取价格

暂无描述
R4330TS MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 300V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
R4330TSE3 MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 1 Element, 150A, 300V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1
R4331 ETC

获取价格

Optoelectronic
R4332 HAMAMATSU

获取价格

PHOTOMULTlPLlER TUBES
R4332N ETC

获取价格

Optoelectronic
R4333 ETC

获取价格

Optoelectronic