Datasheet > R3559TC16T

R3559TC16T

更新时间： 2024-11-16 04:35:03

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	338K
描述
Silicon Controlled Rectifier

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数据手册

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R3559TC16T 数据手册

Date:- 26 Jun, 2001

Data Sheet Issue:- 1

WESTCODE

Provisional Data

Distributed Gate Thyristor

Types R3559TC16x to R3559TC20x

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

(Note 1)

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

1600-2000

1700-2100

MAXIMUM

LIMITS

3559

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C (note 2)

Mean on-state current. T_sink=85°C (note 2)

Mean on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

2421

1447

7060

6038

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

38.9

A²s

A/µs

≤

42.7

Peak non-repetitive surge t_p=10ms, V_RM10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM(note 5)

7.57×10⁶

9.12×10⁶

500

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6)

Maximum rate of rise of on-state current (non-repetitive) (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

di_T/dt

1000

V_RGM

P_G(AV)

P_GM

V_GD

0.25

Non-trigger gate voltage (Note 7)

T_HS

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types R3559TC16x to R3559TC20x Issue 2

Page 1 of 12

June, 2001

12 3 4 5 6 7...12

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